STL12N65M2 Datasheet N-channel 650 V, 0.62 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Features V R max. I P Order code DS DS(on) D TOT STL12N65M2 650 V 0.75 5 A 48 W 1 2 Extremely low gate charge 3 4 Excellent output capacitance (C ) profile OSS PowerFLAT 5x6 HV 100% avalanche tested Zener-protected D(5, 6, 7, 8) 8 7 6 5 Applications Switching applications G(4) Description This device is an N-channel Power MOSFET developed using MDmesh M2 1 2 3 4 technology. Thanks to its strip layout and an improved vertical structure, the device Top View S(1, 2, 3) exhibits low on-resistance and optimized switching characteristics, rendering it AM15540v1 suitable for the most demanding high efficiency converters. Product status link STL12N65M2 Product summary Order code STL12N65M2 Marking 12N65M2 PowerFLAT 5x6 Package HV Packing Tape and reel DS11049 - Rev 2 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL12N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 5 case I A D Drain current (continuous) at T = 100 C 3.2 case (1) I Drain current (pulsed) 20 A DM P Total power dissipation at T = 25 C 48 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 5 A, di/dt 400 A/s V (peak) V , V = 400 V. SD DS (BR)DSS DD 3. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.6 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 1.2 A AR (2) E Single pulse avalanche energy 105 mJ AS 1. Pulse width limited by T . jmax 2. starting T = 25 C, I = I , V = 50 V. j D AR DD DS11049 - Rev 2 page 2/15