STL150N3LLH5 Datasheet N-channel 30 V, 1.4 m typ., 35 A STripFET F5 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I Order code DS DS(on) D (1) STL150N3LLH5 30 V 1.75 m 35 A 1. The value is rated according R . thj-pcb Low on-resistance R DS(on) High avalanche ruggedness PowerFLAT 5x6 Low gate drive power loss D(5, 6, 7, 8) 8 7 6 5 Applications Switching applications G(4) Description This N-channel Power MOSFET is developed using the STripFET F5 technology and 1 2 3 4 has been optimized to achieve very low on-state resistance, contributing to a FoM Top View S(1, 2, 3) that is among the best in its class. AM15540v2 Product status link STL150N3LLH5 Product summary Order code STL150N3LLH5 Marking 150N3LH5 Package PowerFLAT 5x6 Packing Tape and reel DS5565 - Rev 7 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL150N3LLH5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 30 V DS V Gate-source voltage 22 V GS Drain current (continuous) at T = 25 C 195 C (1) I A D Drain current (continuous) at T = 100 C 122 C Drain current (continuous) at T = 25 C 35 pcb (2) I A D Drain current (continuous) at T = 100 C 21.8 pcb (3) I Drain current (pulsed) 140 A DM (1) P Total power dissipation at T = 25 C 114 W TOT C (2) P Total power dissipation at T = 25 C 4 W TOT pcb T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. This value is rated according to R . thj-c 2. This value is rated according to R . thj-pcb 3. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.1 thj-case C/W (1) R Thermal resistance junction-pcb 31.3 thj-pcb 1. When mounted on a 1-inch FR-4 board, 2oz Cu, t < 10 s. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Not-repetitive avalanche current (pulse width limited by T max) 17 A AV J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 24 V) 300 mJ AS J D AV DD DS5565 - Rev 7 page 2/17