X-On Electronics has gained recognition as a prominent supplier of STL15N60M2-EP MOSFETs across the USA, India, Europe, Australia, and various other global locations. STL15N60M2-EP MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STL15N60M2-EP STMicroelectronics

STL15N60M2-EP electronic component of STMicroelectronics
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Part No.STL15N60M2-EP
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STL15N60M2-EP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 1.4 ea
Line Total: USD 11.2 
Availability - 2869
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
2869
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4444
10 : USD 1.2798
25 : USD 1.2758
100 : USD 1.1098
250 : USD 1.1051
500 : USD 1.0006
1000 : USD 0.9895

2869
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 8
Multiples : 1
8 : USD 1.4
10 : USD 1.2405
25 : USD 1.2366
100 : USD 1.0757
250 : USD 1.0711
500 : USD 0.9698
1000 : USD 0.9591

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STL15N60M2-EP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STL15N60M2-EP and other electronic components in the MOSFETs category and beyond.

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STL15N60M2-EP Datasheet N-channel 600 V, 0.390 typ., 7 A MDmesh M2 EP Power MOSFET in a PowerFLAT 5x6 HV package Features Order code V T R max. I P DS Jmax DS(on) D TOT STL15N60M2-EP 650 V 0.418 7 A 55 W 1 2 Extremely low gate charge 3 4 Excellent output capacitance (C ) profile OSS PowerFLAT 5x6 HV Very low turn-off switching losses 100% avalanche tested Zener-protected D(5, 6, 7, 8) 8 7 6 5 Applications G(4) Switching applications Tailored for very high frequency converters (f > 150 kHz) 1 2 3 4 Description Top View S(1, 2, 3) This device is an N-channel Power MOSFET developed using MDmesh AM15540v1 M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status STL15N60M2-EP Product summary Order code STL15N60M2-EP Marking 15N60M2E Package PowerFLAT 5x6 HV Packing Tape and Reel DS11101 - Rev 3 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STL15N60M2-EP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 7 case I A D Drain current (continuous) at T = 100 C 4.6 case (1) I Drain current (pulsed) 28 A DM P Total dissipation at T = 25 C 55 W TOT case (2) I Avalanche current, repetitive or not repetitive 1.5 A AR (3) E Single pulse avalanche energy 110 mJ AS (4) dv/dt Peak diode recovery voltage slope 15 V/ns (5) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. Pulse width limited by T . jmax 3. starting T = 25 C, I = I , V = 50 V. j D AR DD 4. I 7 A, di/dt = 400 A/s V peak < V , V = 400 V. SD DS (BR)DSS DD 5. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.27 thj-case C/W (1) R Thermal resistance junction-pcb 59 thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. DS11101 - Rev 3 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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