STL16N60M6 STMicroelectronics

STL16N60M6 N-channel 600 V, 0.30 typ., 8 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I DS DS(on) D STL16N60M6 600 V 0.35 8 A 1 Reduced switching losses 2 Lower R x area vs previous generation 3 DS(on) 4 Low gate input resistance 100% avalanche tested PowerFLAT 5x6 HV Zener-protected Applications Figure 1: Internal schematic diagram Switching applications D(5, 6, 7, 8) 8 7 6 5 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the G(4) previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as 1 2 3 4 a user-friendly experience for maximum end- application efficiency. Top View S(1, 2, 3) Table 1: Device summary Order code Marking Package Packing STL16N60M6 16N60M6 PowerFLAT 5x6 HV Tape and reel April 2017 DocID030476 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STL16N60M6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 5x6 HV package information .................................... 10 4.2 PowerFLAT 5x6 packing information ........................................... 12 5 Revision history ............................................................................ 14 2/15 DocID030476 Rev 1