STL18N55M5 STMicroelectronics

STL18N55M5 N-channel 550 V, 0.205 , 13 A PowerFLAT 8x8 HV MDmesh V Power MOSFET Features V R DSS DS(on) Type I 3 WOTTOM VIE D T max Jmax 3 3 (1) STL18N55M5 600 V < 0.270 13 A 1. The value is rated according to R thj-case 100% avalanche tested Low input capacitance and gate charge 4 X (6 ER&, W O 0 Low gate input resistance Application Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. 3 - V Table 1. Device summary Order code Marking Package Packaging STL18N55M5 18N55M5 PowerFLAT 8x8 HV Tape and reel October 2011 Doc ID 17468 Rev 2 1/14 www.st.com 14 Contents STL18N55M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 Doc ID 17468 Rev 2