STL18N65M5 STMicroelectronics

STL18N65M5 N-channel 650 V, 0.215 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV package Datasheet preliminary data Features Order code V R I DS DS(on)max. D (1) STL18N65M5 710 V 0.240 15 A 1. The value is rated according to R and limited thj-case by package. 1 Outstanding R *area 2 DS(on) 3 Extremely large avalanche performance 4 Gate charge minimized PowerFLAT 5x6 HV Very low intrinsic capacitance 100% avalanche tested Figure 1. Internal schematic diagram Applications D(5, 6, 7, 8) Switching applications 8 7 6 5 Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary G(4) vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- 12 3 4 resistance, which is unmatched among silicon- based Power MOSFETs, making it especially Top View S(1, 2, 3) suitable for applications which require superior AM15540v2 power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STL18N65M5 18N65M5 PowerFLAT 5x6 HV Tape and reel June 2013 DocID023634 Rev 2 1/17 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 17 change without notice. Contents STL18N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 16 2/17 DocID023634 Rev 2