STL160N3LLH6 STMicroelectronics

STL160N3LLH6 N-channel 30 V, 0.0011 typ., 45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package Datasheet production data Features Order code V R max I DS DS(on) D (1) STL160N3LLH6 30 V 0.0013 45 A 1. The value is rated according to R thj-pcb 1 2 Very low on-resistance 3 4 Very low switching gate charge High avalanche ruggedness Low gate drive power loss PowerFLAT5x6 Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low * R in all packages. DS(on) 6 0 Y Table 1. Device summary Order code Marking Package Packaging STL160N3LLH6 160N3LH6 PowerFLAT 5x6 Tape and reel September 2014 DocID18223 Rev 6 1/15 This is information on a product in full production. www.st.com 15Contents STL160N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 12 6 Revision history . 14 2/15 DocID18223 Rev 6