Product Information

STL10N60M2

Name: STL10N60M2
Brand: STMicroelectronics
SKU: STL10N60M2_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STL10N60M2 electronic component of STMicroelectronics

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Datasheet

STMicroelectronics MOSFET

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1 Multiples : 1 STL10N60M2 STMicroelectronics	1 : USD 0.4205 10 : USD 0.3972 25 : USD 0.3906 100 : USD 0.384 250 : USD 0.3762	N/A Obsolete

0 - WHS 2 MOQ : 3000 Multiples : 3000 STL10N60M2 STMicroelectronics	3000 : USD 0.6869 6000 : USD 0.6869	N/A Obsolete

0 - WHS 3 MOQ : 3000 Multiples : 3000 STL10N60M2 STMicroelectronics	3000 : USD 1.2074	N/A Obsolete

0 - WHS 4 MOQ : 1 Multiples : 1 STL10N60M2 STMicroelectronics	1 : USD 4.648 10 : USD 1.6775 100 : USD 1.3142 500 : USD 1.0792 1000 : USD 0.8516 3000 : USD 0.8249	N/A Obsolete

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Additional Infomation About Product

STL10N60M2 N-channel 600 V, 0.580 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features V DS Order code R max I DS(on) D T Jmax STL10N60M2 650 V 0.660 5.5 A Extremely low gate charge 1 2 3 Lower R x area vs previous generation DS(on) 4 Low gate input resistance PowerFLAT 5x6 HV 100% avalanche tested Zener-protected Applications Figure 1. Internal schematic diagram Switching applications D(5, 6, 7, 8) 8 7 6 5 Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh G(4) technology: MDmesh II Plus low Qg. This revolutionary Power MOSFET associates a vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and 12 3 4 gate charge. It is therefore suitable for the most demanding high efficiency converters. Top View S(1, 2, 3) AM15540v3 Table 1. Device summary Order code Marking Package Packaging STL10N60M2 10N60M2 PowerFLAT 5x6 HV Tape and reel March 2014 DocID025439 Rev 2 1/16 This is information on a product in full production. www.st.comContents STL10N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID025439 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 5.5 A 5.5 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 660 mOhms 660 mOhms
Transistor Polarity N - Channel N - Channel
Vgs - Gate-Source Breakdown Voltage +/- 25 V +/- 25 V
Vgs th - Gate-Source Threshold Voltage 3 V 3 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 48 W 48 W
Mounting Style Smd/Smt Smd/Smt
Package / Case Powerflat - 4 Powerflat - 4
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 25 V 25 V
Qg - Gate Charge 13.5 nC 13.5 nC
Channel Mode Enhancement Enhancement
Tradename Mdmesh Mdmesh
Configuration Single Single
Series Stl10n60m2 Stl10n60m2
Brand Stmicroelectronics Stmicroelectronics
Ciss - Input Capacitance 400 pF 400 pF
Fall Time 13.2 ns 13.2 ns
Rise Time 8 ns 8 ns
Typical Turn-Off Delay Time 32.5 ns 32.5 ns
Transistor Type 1 N - Channel 1 N - Channel
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Factory Pack Quantity : 3000 3000
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-On Delay Time 8.8 ns 8.8 ns