STL11N6F7 N-channel 60 V, 10 m typ., 11 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V R max. I DS DS(on) D STL11N6F7 60 V 12 m 11 A 1 2 3 Features 4 Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss PowerFLAT 3.3x3.3 High avalanche ruggedness Applications Figure 1: Internal schematic diagram Switching applications D(5, 6, 7, 8) Description 8 7 6 5 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal G(4) capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 1 2 3 4 AM15810v1 Table 1: Device summary Order code Marking Package Packing STL11N6F7 11N6F PowerFLAT 3.3x3.3 Tape and reel November 2015 DocID028134 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STL11N6F7 Contents 1 Electrical ratings ............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curve) ........................................................ 5 3 Test circuits ...................................................................................... 7 4 Package mechanical data ................................................................ 8 4.1 PowerFLAT 3.3x3.3 package information ......................................... 9 5 Revision history .............................................................................. 12 2/13 DocID028134 Rev 2