X-On Electronics has gained recognition as a prominent supplier of RRL035P03FRATR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RRL035P03FRATR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RRL035P03FRATR ROHM

RRL035P03FRATR electronic component of ROHM
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See Product Specifications
Part No.RRL035P03FRATR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Pch -30V Vds -3.5A 0.058Rds(on) 8Qg
Datasheet: RRL035P03FRATR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5738 ea
Line Total: USD 0.57 
Availability - 4563
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4563
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5738
10 : USD 0.3864
100 : USD 0.2691
500 : USD 0.2185
1000 : USD 0.2024
3000 : USD 0.1713
9000 : USD 0.1633

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RRL035P03FRATR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRL035P03FRATR and other electronic components in the MOSFETs category and beyond.

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RRL035P03 FRA Pch -30V -3.5A Power MOSFET Datasheet Outline (6) V 30V DSS (5) TUMT6 (4) R (Max.) 50m DS(on) I 3.5A (1) D (2) (3) P 1.0W D Features Inner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TUMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 2 BODY DIODE 5) AEC-Q101 Qualified Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking UF Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage V 30 DSS *1 Continuous drain current I 3.5 A D *2 Pulsed drain current A I 14 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.0 W D Power dissipation *4 0.32 W P D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2016.06 - Rev.B 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.B 1/11Data Sheet RRL035P03FRA Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 125 C/W thJA Thermal resistance, junction - ambient *4 R - - 391 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V Breakdown voltage I = 1mA (BR)DSS D - 25 - mV/C temperature coefficient T referenced to 25C j I V = 30V, V = 0V Zero gate voltage drain current - - 1 A DSS DS GS I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I =b 1mA Gate threshold voltage (GS)th D - 3.9 - mV/C temperature coefficient T referenced to 25C j V = 10V, I = 3.5A - 36 50 GS D V = 4.5V, I = 1.7A - 52 72 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.0V, I = 1.7A - 58 81 GS D V = 10V, I = 3.5A, T =125C - 52 73 GS D j R Gate input resistannce f = 1MHz, open drain - 19 - G *5 Transconductance V = 10V, I = 3.5A 2.3 6.5 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10 s, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2016.06 - Rev.B 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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