Green
DMN3009SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary Features and Benefits
I Max
D Low On-Resistance
V R Max
(BR)DSS DS(ON)
T = +25C
C
Low Input Capacitance
5.5m @ V = 10V 45A
GS
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
30V
9m @ V = 4.5V 30A
GS Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications Mechanical Data
Case: PowerDI 3333-8
This MOSFET is designed to minimize the on-state resistance
(R ), yet maintain superior switching performance, making it
DS(ON) Case Material: Molded Plastic,Gree Molding Compound.
ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Power Management Functions Terminal Connections Indicator: See Diagram
DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Battery
Weight: 0.072 grams (Approximate)
PowerDI3333-8
Pin 1
S
S
S
G
D
D
D
D
Top View
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN3009SFG-7 2,000/Tape & Reel
PowerDI3333-8
DMN3009SFG-13 3,000/Tape & Reel
PowerDI3333-8
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMN3009SFG
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage 20 V
V
GSS
16
T = +25C
A
I A
D
13.6
13
T = +70C
TA = +70C
A
Continuous Drain Current, V = 10V (Note 6)
GS
13.6
TT = = +7+205CC 45
CA
A
I
D
TT = = +7+700CC 35
CA
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 80 A
T = +70C I
A DM
Maximum Continuous Body Diode Forward Current (Note 6) 20 A
I
S
13.6
Avalanche Current, L = 0.1mH 33 A
I
AS
55
Avalanche Energy, L = 0.1mH E mJ
AS
13.6
Thermal Characteristics
Characteristic Symbol Value Unit
0.9
T = +25C
A
P
Total Power Dissipation (Note 5) D W
T = +70C 0.6
A
137
Thermal Resistance, Junction to Ambient (Note 5) R C/W
JA
32
2.1
T = +25C
A
Total Power Dissipation (Note 6) P W
D
1.4
TA = +70C
Thermal Resistance, Junction to Ambient (Note 6) Steady State R 59 C/W
JA
Thermal Resistance, Junction to Case (Note 6) 7.8 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 24V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage V 1 2.5 V V = V , I = 250A
GS(TH) DS GS D
5.5 V = 10V, I = 20A
GS D
Static Drain-Source On-Resistance m
RDS(ON)
9
V = 4.5V, I = 16A
GS D
Diode Forward Voltage 1 V
V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance 2,000 pF
C
iss
V = 15V, V = 0V,
DS GS
315
Output Capacitance C pF
oss
f = 1MHz
Reverse Transfer Capacitance 248 pF
C
rss
Gate Resistance 2.2
R V = 0V, V = 0V, f = 1MHz
g DS GS
20 nC
Total Gate Charge (V = 4.5V) Q
GS g
42 nC
Total Gate Charge (V = 10V) Q
GS g
V = 15V, I = 15A
DS D
4.7
Gate-Source Charge Q nC
gs
Gate-Drain Charge 7.4 nC
Q
gd
Turn-On Delay Time 3.9 nS
t
D(ON)
Turn-On Rise Time 4.1 nS
t V = 15V, V = 10V,
R DD GS
Turn-Off Delay Time 31 nS R = 3.3, I = 15A
t G D
D(OFF)
14.6
Turn-Off Fall Time t nS
F
Reverse Recovery Time 15 nS
t
RR
I = 15A, di/dt = 100A/s
F
Reverse Recovery Charge 6 nC
Q
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
2 of 7
DMN3009SFG September 2015
Diodes Incorporated
www.diodes.com
Document number: DS36747 Rev. 5 - 2
ADVANCE INFORMATION
ADVANCED INFORMATION