X-On Electronics has gained recognition as a prominent supplier of QS8K11TCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS8K11TCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS8K11TCR ROHM

QS8K11TCR electronic component of ROHM
QS8K11TCR ROHM
QS8K11TCR MOSFETs
QS8K11TCR  Semiconductors

Images are for reference only
See Product Specifications
Part No. QS8K11TCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4V Drive Nch+Nch Si MOSFET
Datasheet: QS8K11TCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.12 ea
Line Total: USD 1.12 
Availability - 2367
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2367
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.12
10 : USD 0.762
100 : USD 0.4928
500 : USD 0.4004
1000 : USD 0.3707
3000 : USD 0.3355
6000 : USD 0.3355
9000 : USD 0.3212

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QS8K11TCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS8K11TCR and other electronic components in the MOSFETs category and beyond.

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QS8K11 Dual Nch 30V 3.5A Power MOSFET Datasheet lOutline (8) V TSMT8 30V DSS (7) (6) R (Max.) (5) 50mW DS(on) I (1) 3.5A D (2) (3) P (4) 1.5W D lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Small Surface Mount Package (TSMT8). *1 ESD PROTECTION DIODE 4) Pb-free lead plating RoHS compliant *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking K11 lAbsolute maximum ratings(T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 Continuous drain current I 3.5 A D *2 Pulsed drain current A I 12 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.5 W D Power dissipation *4 0.55 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 1/11Data Sheet QS8K11 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 83.3 C/W thJA *4 Thermal resistance, junction - ambient R - - 227 C/W thJA lElectrical characteristics(T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V Breakdown voltage I = 1mA (BR)DSS D - 35 - mV/C temperature coefficient T referenced to 25C j I V = 30V, V = 0V Zero gate voltage drain current - - 1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - -3.3 - mV/C temperature coefficient T referenced to 25C j V =10V, I =3.5A - 35 50 GS D V =4.5V, I =3.5A - 45 65 GS D Static drain - source *5 R m W DS(on) on - state resistance V 4.0V, I =3.5A - 50 70 GS D V =10V, I =3.5A, T =125C - 53 75 GS D j R Gate input resistannce f = 1MHz, open drain - 2 - W G *5 V = 10V, I = 3.5A Transconductance g 2.2 4.4 - S DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a seramic board (30300.8mm) *4 Mounted on a FR4 (20200.8mm) *5 Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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