QS8K11 Dual Nch 30V 3.5A Power MOSFET Datasheet lOutline (8) V TSMT8 30V DSS (7) (6) R (Max.) (5) 50mW DS(on) I (1) 3.5A D (2) (3) P (4) 1.5W D lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) Built-in G-S Protection Diode. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Small Surface Mount Package (TSMT8). *1 ESD PROTECTION DIODE 4) Pb-free lead plating RoHS compliant *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking K11 lAbsolute maximum ratings(T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 Continuous drain current I 3.5 A D *2 Pulsed drain current A I 12 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.5 W D Power dissipation *4 0.55 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 1/11Data Sheet QS8K11 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 83.3 C/W thJA *4 Thermal resistance, junction - ambient R - - 227 C/W thJA lElectrical characteristics(T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V Breakdown voltage I = 1mA (BR)DSS D - 35 - mV/C temperature coefficient T referenced to 25C j I V = 30V, V = 0V Zero gate voltage drain current - - 1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - -3.3 - mV/C temperature coefficient T referenced to 25C j V =10V, I =3.5A - 35 50 GS D V =4.5V, I =3.5A - 45 65 GS D Static drain - source *5 R m W DS(on) on - state resistance V 4.0V, I =3.5A - 50 70 GS D V =10V, I =3.5A, T =125C - 53 75 GS D j R Gate input resistannce f = 1MHz, open drain - 2 - W G *5 V = 10V, I = 3.5A Transconductance g 2.2 4.4 - S DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a seramic board (30300.8mm) *4 Mounted on a FR4 (20200.8mm) *5 Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 2/11