DMC4050SSDQ
40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Matched N & P R Minimizes Power Losses
DS(ON)
I Max
D
Fast Switching Minimizes Switching Losses
Device BV R Max
DSS DS(ON) T = +25C
A
Dual Device Reduces PCB Area
(Notes 7 & 9)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
45m @ V = 10V 5.8A
GS
Halogen and Antimony Free. Green Device (Note 3)
Q1 40V
Qualified to AEC-Q101 Standards for High Reliability
60m @ V = 4.5V 4.2A
GS
PPAP Capable (Note 4)
45m @ V = -10V -5.8A
GS
Q2 -40V
60m @ V = -4.5V -4.2A
GS
Mechanical Data
Description and Applications
This MOSFET is designed to meet the stringent requirements of Case: SO-8
Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound.
PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
3-Phase BLDC Motor
Solderable per MIL-STD-202, Method 208
CCFL Backlighting
Weight: 0.074 grams (Approximate)
SO-8
D1 D2
S1 D1
G1 D1
G1 G2
S2
D2
G2 D2
S1 S2
Top View
Top View Equivalent Circuit
Ordering Information (Note 5)
Part Number Case Packaging
DMC4050SSDQ-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC4050SSDQ
Marking Information
= Manufacturers Marking
C4050SD = Product Type Marking Code
C4050SD
YYWW = Date Code Marking
YY or YY= Year (ex: 16 = 2016)
YY
WW
WW = Week (01 - 53)
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units
Drain-Source Voltage V 40 -40
DSS
V
Gate-Source Voltage 20 20
V
GSS
(Notes 7 & 9) 5.8 -5.8
4.38 -4.52
T = +70C (Notes 7 & 9)
A
Continuous Drain Current
V = 10V I
GS D
(Notes 6 & 9) 4.2 -4.2
(Notes 6 & 10) 5.3 -5.3
A
Pulsed Drain Current (Notes 8 & 9) 24.1 -24.9
V = 10V I
GS DM
Continuous Source Current (Body Diode) (Notes 7 & 9) 2.5 -2.5
I
S
Pulsed Source Current (Body Diode) (Notes 8 & 9) 24.1 -24.9
I
SM
Thermal Characteristics
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit
(Notes 6 & 9) 1.25 10
Power Dissipation
(Notes 6 & 10) P 1.8 14.3 W
D
Linear Derating Factor
(Notes 7 & 9) 2.14 17.2
(Notes 6 & 9) 100
Thermal Resistance, Junction to Ambient (Notes 6 & 10) R 70
JA
C/W
(Notes 7 & 9) 58
Thermal Resistance, Junction to Lead (Notes 6 & 11) 51
R
JL
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note (6), except the device is measured at t 10 sec.
8. Same as Note (6), except the device is pulsed with D = 0.02 and pulse width 300s.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).
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DMC4050SSDQ April 2016
Diodes Incorporated
www.diodes.com
Document number: DS38781 Rev. 1 - 2