X-On Electronics has gained recognition as a prominent supplier of QS8K21TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS8K21TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS8K21TR ROHM

QS8K21TR electronic component of ROHM
QS8K21TR ROHM
QS8K21TR MOSFETs
QS8K21TR  Semiconductors

Images are for reference only
See Product Specifications
Part No. QS8K21TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET TRANS MOSFET NCH 45V 4A 8PIN
Datasheet: QS8K21TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1825 ea
Line Total: USD 1.18 
Availability - 1382
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1382
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 1.1825
10 : USD 0.78
100 : USD 0.5577
500 : USD 0.4862
1000 : USD 0.407
3000 : USD 0.3894
6000 : USD 0.3894

766
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 161
Multiples : 1
161 : USD 1.1466

24
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 25
Multiples : 1
25 : USD 3.9186

155
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 160
Multiples : 1
160 : USD 0.6644

9
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 10
Multiples : 1
10 : USD 9.9237

145
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 133
Multiples : 1
133 : USD 0.6734

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the QS8K21TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS8K21TR and other electronic components in the MOSFETs category and beyond.

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QS8K21 Datasheet 45V Nch + Nch Middle Power MOSFET llOutline TSMT8 V 45V DSS R (Max.) 53m DS(on) I 4A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K21 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 45 V DSS Continuous drain current I 4 A D *1 I Pulsed drain current 12 A D,pulse V Gate - Source voltage 20 V GSS total 1.5 *2 P D Power dissipation element 1.25 W *3 P total 0.7 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 QS8K21 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 83.3 *2 R thJA Thermal resistance, junction - ambient element - - 100 /W *3 R total - - 178 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 4A - 38 53 GS D Static drain - source *4 R V = 4.5V, I = 4A - 48 67 m DS(on) GS D on - state resistance V = 4V, I = 4A - 53 75 GS D Gate input resistance R f = 1MHz, open drain - 6 - G Forward Transfer *4 Y V = 10V, I = 4A 2 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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