QSL12TR ROHM

QSL12 Transistors General purpose transistor (isolated transistor and diode) QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. z External dimensions (Unit : mm) z Applications DC / DC converter QSL12 Motor driver 2.8 1.6 z Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.3 to 0.6 ROHM : TSMT5 Each lead has same dimensions z Structure Abbreviated symbol : L12 Silicon epitaxial planar transistor Schottky barrier diode z Equivalent circuit (5) (4) Di2 Tr1 (1) (2) (3) z Packaging specifications Type QSL12 Package TSMT5 Marking L12 Code TR Basic ordering unit(pieces) 3000 Rev.A 1/4 Not Recommended for New Designs 0.16 0.4 (3) (2) (1) 0 to 0.1 (5) (4) 0.7 0.95 0.95 1.9 0.85 2.9+ + + + + + QSL12 Transistors z Absolute maximum ratings (Ta=25C) Tr1 Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 1 A Collector current 1 ICP 2 A 2 Power dissipation Pc 0.9 W / ELEMENT Junction temperature Tj 150 C Range of storage temperature Tstg 40 to +125 C 1 Single pulse, Pw=1ms t 2 Mounted on a 25mm 25mm 0.8mm ceramic substrate Di2 Parameter Symbol Limits Unit Peak reverse voltage VRM 25 V Reverse voltage (DC) VR 20 V Average rectified forward current IF 700 mA Forward current surge peak (60HZ, 1) IFSM 3 A 0.7 Power dissipation PD W / ELEMENT Junction temperature Tj 125 C Range of storage temperature Tstg 40 to +125 C t Mounted on a 25mm 25mm 0.8mm ceramic substrate Tr1&Di2 Parameter Symbol Limits Unit 1 0.5 W / TOTAL Total power disipation PD 2 1.25 W / TOTAL 1 Each terminal mounted on a recommended land. t 2 Mounted on a 25mm 25mm 0.8mm ceramic substrate. z Electrical characteristics (Ta=25C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 V IC=10A Collector-emitter breakdown voltage BVCEO 30 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=10A Collector cutoff current ICBO 100 nA VCB=30V IEBO 100 nA VEB=6V Emitter cutoff current Collector-emitter saturation voltage VCE(sat) 120 350 mV IC/IB=500mA/25mA DC current gain hFE 270 680 VCE/IC=2V/100mA Transition frequency fT 320 MHz VCE=2V, IE= 100mA, f=100MHz Collector output capacitance Cob 7 pF VCB=10V, IE=0A, f=1MHz Pulsed Di2 Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage 450 490 mV IF=700mA VF Reverse current IR 200 A VR=20V Reverse recovery fime trr 9 ns IF=IR=100mA, Irr=0.1IR Rev.A 2/4 Not Recommended for New Designs