Data Sheet 4V Drive Nch + Pch MOSFET QS8M13 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSMT8 (8) (7) (6) (5) Silicon P-channel MOSFET Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbreviated symbol : M13 Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Package Taping (1) Tr1 Source 2 2 (2) Tr1 Gate Type Code TCR (3) Tr2 Source (4) Tr2 Gate Basic ordering unit (pieces) 3000 1 1 (5) Tr2 Drain QS8M13 (6) Tr2 Drain (1) (2) (3) (4) (7) Tr1 Drain (8) Tr1 Drain 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) Limits Parameter Symbol Unit Tr1 : N-ch Tr2 : P-ch Drain-source voltage V 30 30 V DSS Gate-source voltage V 20 20 V GSS Continuous I 6 5A D Drain current *1 Pulsed I 18 18 A DP Continuous I 1.0 1.0 A Source current s *1 (Body Diode) 18 18 A Pulsed I sp *2 1.5 W / TOTAL P Power dissipation D 1.25 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.A 1/10 Not Recommended for New DesignsData Sheet QS8M13 Electrical characteristics (Ta = 25 C) <Tr1(Nch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -20 28 I =6A, V =10V D GS Static drain-source on-state * R -25 35 m I =6A, V =4.5V DS (on) D GS resistance 28 39 I =6A, V =4.0V D GS Forward transfer admittance l Y l* 3.0 - - S V =10V, I =6A fs DS D Input capacitance C - 390 - pF V =10V iss DS Output capacitance C - 150 - pF V =0V oss GS Reverse transfer capacitance C - 70 - pF f=1MHz rss Turn-on delay time t -8 - nsI =3A, V 15V ** d(on) D DD Rise time t - 40 - ns V =10V ** r GS Turn-off delay time t ** - 35 - ns R =5 d(off) L Fall time t ** -7 - nsR =10 f G Total gate charge Q - 5.5 - nC I =6A, V 15V ** g D DD Gate-source charge Q ** - 1.5 - nC V =5V gs GS Gate-drain charge Q - 2.1 - nC ** gd *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =6A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.05 - Rev.A Not Recommended for New Designs