X-On Electronics has gained recognition as a prominent supplier of R5016FNX MOSFETs across the USA, India, Europe, Australia, and various other global locations. R5016FNX MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R5016FNX ROHM

R5016FNX electronic component of ROHM
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Part No.R5016FNX
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET N-CH 500V 16A
Datasheet: R5016FNX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
21: USD 5.0874 ea
Line Total: USD 106.84 
Availability - 424
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 21  Multiples: 1
Pack Size: 1
Availability Price Quantity
424
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 21
Multiples : 1
21 : USD 5.0874
25 : USD 4.8689
50 : USD 4.6834
100 : USD 4.5244
250 : USD 4.3873

   
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RoHS - XON
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Rds On - Drain-Source Resistance
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We are delighted to provide the R5016FNX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R5016FNX and other electronic components in the MOSFETs category and beyond.

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Data Sheet 10V Drive Nch MOSFET R5016FNX Structure Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain (1) (2)(3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering unit (pieces) 500 R5016FNX (1) Gate (1) (2) (3) (2) Drain (3) Source 1 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 500 V DSS Gate-source voltage V 30 V GSS *3 Continuous I 16 A D Drain current *1 Pulsed I 64 A DP *3 Continuous I 16 A Source current S *1 (Body Diode) Pulsed I 64 A SP *2 Avalanche current I 8A AS *2 Avalanche energy E 17.1 mJ AS *4 Power dissipation P 50 W D Channel temperature T 150 C ch Range of storage temperature T 55 to 150 C stg *1 Pw10s, Duty cycle1% *2 L 500H, V =50V, R =25, T =25C DD G ch *3 Limited only by maximum channel temperature allowed. *4 T =25C C Thermal resistance Parameter Symbol Limits Unit * Channel to Case R 2.5 C / W th (ch-c) * T =25C C www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/6 Not Recommended for New Designs 14.0 15.0 12.0 2.5 8.0Data Sheet R5016FNX Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 100 nA V = 30V, V =0V GSS GS DS Drain-source breakdown voltage V 500 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - - 100 AV =500V, V =0V DSS DS GS Gate threshold voltage V 3.0 - 5.0 V V =10V, I =1mA GS (th) DS D Static drain-source on-state * R I =8A, V =10V - 0.25 0.325 DS (on) D GS resistance * Forward transfer admittance l Y l 6.2 11 - S V =10V, I =8A fs DS D Input capacitance C - 1700 - pF V =25V iss DS Output capacitance C - 1000 - pF V =0V oss GS Reverse transfer capacitance C - 35 - pF f=1MHz rss Turn-on delay time t - 35 - ns V 250V, I =8.0A d(on)* DD D Rise time t - 60 - ns V =10V r * GS Turn-off delay time t - 110 - ns R =31.25 d(off) L * Fall time t - 35 - ns R =10 f * G Total gate charge Q - 46 - nC V 250V g * DD Gate-source charge Q - 11 - nC I =8.0A * gs D Gate-drain charge Q - 19 - nC V =10V gd GS * *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V * - - 1.5 V I =16A, V =0V SD S GS I =16A, V =0V S GS * t Reverse recovery time 75 100 125 ns rr di/dt=100A/ s *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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