Data Sheet 10V Drive Nch MOSFET R5016FNX Structure Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain (1) (2)(3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering unit (pieces) 500 R5016FNX (1) Gate (1) (2) (3) (2) Drain (3) Source 1 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 500 V DSS Gate-source voltage V 30 V GSS *3 Continuous I 16 A D Drain current *1 Pulsed I 64 A DP *3 Continuous I 16 A Source current S *1 (Body Diode) Pulsed I 64 A SP *2 Avalanche current I 8A AS *2 Avalanche energy E 17.1 mJ AS *4 Power dissipation P 50 W D Channel temperature T 150 C ch Range of storage temperature T 55 to 150 C stg *1 Pw10s, Duty cycle1% *2 L 500H, V =50V, R =25, T =25C DD G ch *3 Limited only by maximum channel temperature allowed. *4 T =25C C Thermal resistance Parameter Symbol Limits Unit * Channel to Case R 2.5 C / W th (ch-c) * T =25C C www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/6 Not Recommended for New Designs 14.0 15.0 12.0 2.5 8.0Data Sheet R5016FNX Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 100 nA V = 30V, V =0V GSS GS DS Drain-source breakdown voltage V 500 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - - 100 AV =500V, V =0V DSS DS GS Gate threshold voltage V 3.0 - 5.0 V V =10V, I =1mA GS (th) DS D Static drain-source on-state * R I =8A, V =10V - 0.25 0.325 DS (on) D GS resistance * Forward transfer admittance l Y l 6.2 11 - S V =10V, I =8A fs DS D Input capacitance C - 1700 - pF V =25V iss DS Output capacitance C - 1000 - pF V =0V oss GS Reverse transfer capacitance C - 35 - pF f=1MHz rss Turn-on delay time t - 35 - ns V 250V, I =8.0A d(on)* DD D Rise time t - 60 - ns V =10V r * GS Turn-off delay time t - 110 - ns R =31.25 d(off) L * Fall time t - 35 - ns R =10 f * G Total gate charge Q - 46 - nC V 250V g * DD Gate-source charge Q - 11 - nC I =8.0A * gs D Gate-drain charge Q - 19 - nC V =10V gd GS * *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V * - - 1.5 V I =16A, V =0V SD S GS I =16A, V =0V S GS * t Reverse recovery time 75 100 125 ns rr di/dt=100A/ s *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Not Recommended for New Designs