R6004CND
Datasheet
Nch 600V 4A Power MOSFET
llOutline
TO-252
V 600V
DSS
SC-63
R (Max.) 1.8
DS(on)
CPT3
I 4A
D
P 65W
D
llInner circuit
llFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V ) guaranteed to
GSS
be 30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
llPackaging specifications
Embossed
Packing
Tape
Reel size (mm) 330
llApplication
Tape width (mm) 16
Type
Switching Power Supply
Basic ordering unit (pcs) 2500
Taping code TL
Marking R6004C
llAbsolute maximum ratings (T = 25C ,unless otherwise specified)
a
Parameter Symbol Value Unit
V
Drain - Source voltage 600 V
DSS
*1
T = 25C I
4 A
C D
Continuous drain current
*1
T = 100C I
1.9 A
C D
*2
I
Pulsed drain current 16 A
DP
V
Gate - Source voltage 25 V
GSS
*3
I
Avalanche current, single pulse 2 A
AS
*3
E
Avalanche energy, single pulse 1.1 mJ
AS
*4
E
Avalanche energy, repetitive 0.9 mJ
AR
Power dissipation (T = 25C) P
65 W
c D
T
Junction temperature 150
j
T
Operating junction and storage temperature range -55 to +150
stg
Reverse diode dv/dt dv/dt 15 V/ns
www.rohm.com
1/13
20160324 - Rev.003
2016 ROHM Co., Ltd. All rights reserved.
Not Recommended for
New Designs
R6004CND
Datasheet
llAbsolute maximum ratings
Parameter Symbol Conditions Values Unit
V = 480V, I = 4A
DS D
Drain - Source voltage slope dv/dt 50 V/ns
T = 125
j
llThermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
R
Thermal resistance, junction - case - - 1.91 /W
thJC
Thermal resistance, junction - ambient R - - 100 /W
thJA
T
Soldering temperature, wavesoldering for 10s - - 265
sold
llElectrical characteristics (T = 25C)
a
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Drain - Source breakdown
V V = 0V, I = 1mA
600 - - V
(BR)DSS GS D
voltage
Drain - Source avalanche
V
V = 0V, I = 2A - 700 - V
(BR)DS GS D
breakdown voltage
V = 600V, V = 0V
DS GS
Zero gate voltage
T = 25C
I
- - 100 A
DSS j
drain current
T = 125C
- - 1000
j
Gate - Source leakage current I V = 25V, V = 0V - - 10 A
GSS
GS DS
Gate threshold voltage V V = 10V, I = 1mA 2.5 - 4.5 V
GS(th)
DS D
V = 10V, I = 2A
GS D
Static drain - source
*6
R T = 25C
- 1.4 1.8
j
DS(on)
on - state resistance
T = 125C
- 3.19 -
j
R
Gate resistance f = 1MHz, open drain - 7.5 -
G
www.rohm.com
2/13
2016 ROHM Co., Ltd. All rights reserved. 20160324 - Rev.003
Not Recommended for
New Designs