X-On Electronics has gained recognition as a prominent supplier of R6004ENDTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6004ENDTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6004ENDTL ROHM

Hot R6004ENDTL electronic component of ROHM
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See Product Specifications
Part No.R6004ENDTL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: R6004ENDTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6241 ea
Line Total: USD 0.62 
Availability - 2289
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2289
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6241
10 : USD 0.563
30 : USD 0.5345
100 : USD 0.5039
500 : USD 0.4217
1000 : USD 0.4123

2305
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9752
10 : USD 0.8625
100 : USD 0.8556
500 : USD 0.8464
1000 : USD 0.7831
2500 : USD 0.6279
5000 : USD 0.6279
10000 : USD 0.6037
25000 : USD 0.6026

2134
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 113
Multiples : 1
113 : USD 1.1224
250 : USD 1.1071
500 : USD 1.0536
1000 : USD 0.9581

1648
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 113
Multiples : 1
113 : USD 1.1224
250 : USD 1.1071
500 : USD 1.0536
1000 : USD 0.9581

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Product
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the R6004ENDTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6004ENDTL and other electronic components in the MOSFETs category and beyond.

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R6004END Datasheet Nch 600V 4A Power MOSFET llOutline TO-252 V 600V DSS SC-63 R (Max.) 0.98 DS(on) CPT3 I 4.0A D P 58W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V ) guaranteed to GSS be 20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Basic ordering unit (pcs) 2500 Taping code TL Marking R6004E llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 T = 25C I 4.0 A C D Continuous drain current *1 T = 100C I 2.2 A C D *2 I Pulsed drain current 8.0 A DP Static 20 V Gate - Source voltage V GSS AC(f 1Hz) 30 V *3 I Avalanche current, repetitive 0.8 A AR *3 E Avalanche energy, single pulse 46 mJ AS *3 E Avalanche energy, repetitive 0.13 mJ AR *4 Power dissipation (T = 25C) P 58 W C D T Junction temperature 150 j T Operating junction and storage temperature range -55 +150 stg www.rohm.com 1/12 20160324 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. R6004END Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 480V, T = 25 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.2 /W thJC *5 R Thermal resistance, junction - ambient - - 147 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2 - 4 V GS(th) DS D V = 10V, I = 1.5A GS D Static drain - source *6 R T = 25C - 0.9 0.98 DS(on) j on - state resistance T = 125C - 1.36 - j R Gate resistance f =1MHz, open drain - 16.7 - G www.rohm.com 2/12 20160324 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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