X-On Electronics has gained recognition as a prominent supplier of R6012FNX MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6012FNX MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6012FNX ROHM

R6012FNX electronic component of ROHM
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Part No.R6012FNX
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET N-CH 600V 12A
Datasheet: R6012FNX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
49: USD 1.9369 ea
Line Total: USD 94.91 
Availability - 0
MOQ: 49  Multiples: 1
Pack Size: 1
Availability Price Quantity
87
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 49
Multiples : 1
49 : USD 4.5227

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Packaging
Technology
Number of Channels
Series
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the R6012FNX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6012FNX and other electronic components in the MOSFETs category and beyond.

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R6012FNX Nch 600V 12A Power MOSFET Datasheet lOutline V 600V DSS TO-220FM R (Max.) 0.51W DS(on) I 12A D (3) P (2) 50W D (1) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain 3) Fast switching speed. (3) Source 4) Gate-source voltage (V ) guaranteed to be 30V. GSS *1 Body Diode 5) Drive circuits can be simple. 6) Parallel use is easy. lPackaging specifications 7) Pb-free lead plating RoHS compliant Packaging Bulk Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 500 Switching Power Supply Taping code - Marking R6012FNX lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 T = 25C I 12 A c D Continuous drain current *1 T = 100C A I 6 c D *2 Pulsed drain current I 48 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 9.6 mJ E AS *4 Avalanche energy, repetitive E 3.5 mJ AR *3 Avalanche current I 6 A AR Power dissipation (T = 25C) P 50 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 1/13 Not Recommended for New DesignsData Sheet R6012FNX lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 12A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.5 C/W thJC Thermal resistance, junction - ambient R - - 70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 12A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS mA Zero gate voltage I T = 25C - 1 100 DSS j drain current T = 125C - - 10 mA j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS (th) DS D V = 10V, I = 6A GS D Static drain - source *6 T = 25C R - 0.39 0.51 W j DS(on) on - state resistance T = 125C - 0.75 - j R Gate input resistance f = 1MHz, open drain - 8.0 - W G www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 2/13 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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