R6012FNX Nch 600V 12A Power MOSFET Datasheet lOutline V 600V DSS TO-220FM R (Max.) 0.51W DS(on) I 12A D (3) P (2) 50W D (1) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain 3) Fast switching speed. (3) Source 4) Gate-source voltage (V ) guaranteed to be 30V. GSS *1 Body Diode 5) Drive circuits can be simple. 6) Parallel use is easy. lPackaging specifications 7) Pb-free lead plating RoHS compliant Packaging Bulk Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 500 Switching Power Supply Taping code - Marking R6012FNX lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 T = 25C I 12 A c D Continuous drain current *1 T = 100C A I 6 c D *2 Pulsed drain current I 48 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 9.6 mJ E AS *4 Avalanche energy, repetitive E 3.5 mJ AR *3 Avalanche current I 6 A AR Power dissipation (T = 25C) P 50 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 1/13 Not Recommended for New DesignsData Sheet R6012FNX lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 12A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.5 C/W thJC Thermal resistance, junction - ambient R - - 70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 12A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS mA Zero gate voltage I T = 25C - 1 100 DSS j drain current T = 125C - - 10 mA j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS (th) DS D V = 10V, I = 6A GS D Static drain - source *6 T = 25C R - 0.39 0.51 W j DS(on) on - state resistance T = 125C - 0.75 - j R Gate input resistance f = 1MHz, open drain - 8.0 - W G www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 2/13 Not Recommended for New Designs