R6020ANZC8 ROHM

Data Sheet 10V Drive Nch MOSFET R6020ANZ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3) High ESD. 3.0 0.75 (1) Gate (1) (2) (3) 0.9 (2) Drain 5.45 5.45 Application (3) Source Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering unit (pieces) 360 R6020ANZ (1) Gate (1) (2) (3) (2) Drain (3) Source 1 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 V GSS *3 Continuous I 20 A D Drain current *1 Pulsed I 80 A DP *3 Continuous I 20 A Source current S *1 (Body Diode) Pulsed I 80 A SP *2 Avalanche current I 10 A AS *2 Avalanche energy E 26.7 mJ AS *4 Power dissipation P 120 W D Channel temperature T 150 C ch Range of storage temperature T 55 to 150 C stg *1 Pw10s, Duty cycle1% *2 L 500H, V =50V, R =25, T =25C DD G ch *3 Limited only by maximum channel temperature allowed. *4 T =25C C Thermal resistance Parameter Symbol Limits Unit * Channel to Case R 1.04 C / W th (ch-c) * T =25C C www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/5 Not Recommended for New Designs 26.5 16.5 14.8 2.0 14.5 4.5 2.5 0.44 16.5 10.0 3.5Data Sheet R6020ANZ Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 100 nA V = 30V, V =0V GSS GS DS Drain-source breakdown voltage V 600 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - - 100 AV =600V, V =0V DSS DS GS Gate threshold voltage V 2.95 - 4.15 V V =10V, I =1mA GS (th) DS D Static drain-source on-state * R I =10A, V =10V - 0.17 0.22 DS (on) D GS resistance * Forward transfer admittance l Y l7 - - S V =10V, I =10A fs DS D Input capacitance C - 2040 - pF V =25V iss DS Output capacitance C - 1660 - pF V =0V oss GS Reverse transfer capacitance C - 70 - pF f=1MHz rss Turn-on delay time t - 40 - ns V 300V, I =10A d(on) * DD D Rise time t - 60 - ns V =10V r * GS Turn-off delay time t - 230 - ns R =30 d(off) L * Fall time t - 70 - ns R =10 f * G Total gate charge Q - 65 - nC V 300V g * DD Gate-source charge Q - 10 - nC I =20A * gs D Gate-drain charge Q - 25 - nC V =10V gd GS * *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 1.5 V I =20A, V =0V * SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A Not Recommended for New Designs