X-On Electronics has gained recognition as a prominent supplier of R6020ANZC8 MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6020ANZC8 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6020ANZC8 ROHM

R6020ANZC8 electronic component of ROHM
R6020ANZC8 ROHM
R6020ANZC8 MOSFETs
R6020ANZC8  Semiconductors

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See Product Specifications
Part No. R6020ANZC8
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-3PF Bulk
Datasheet: R6020ANZC8 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
18: USD 5.7503 ea
Line Total: USD 103.51 
Availability - 349
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ: 18  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 10
Multiples : 1
10 : USD 9.5983

349
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 18
Multiples : 1
18 : USD 5.7503
25 : USD 5.5032
50 : USD 5.2935
100 : USD 4.9172
250 : USD 4.7681

   
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We are delighted to provide the R6020ANZC8 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6020ANZC8 and other electronic components in the MOSFETs category and beyond.

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Data Sheet 10V Drive Nch MOSFET R6020ANZ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3) High ESD. 3.0 0.75 (1) Gate (1) (2) (3) 0.9 (2) Drain 5.45 5.45 Application (3) Source Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering unit (pieces) 360 R6020ANZ (1) Gate (1) (2) (3) (2) Drain (3) Source 1 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 V GSS *3 Continuous I 20 A D Drain current *1 Pulsed I 80 A DP *3 Continuous I 20 A Source current S *1 (Body Diode) Pulsed I 80 A SP *2 Avalanche current I 10 A AS *2 Avalanche energy E 26.7 mJ AS *4 Power dissipation P 120 W D Channel temperature T 150 C ch Range of storage temperature T 55 to 150 C stg *1 Pw10s, Duty cycle1% *2 L 500H, V =50V, R =25, T =25C DD G ch *3 Limited only by maximum channel temperature allowed. *4 T =25C C Thermal resistance Parameter Symbol Limits Unit * Channel to Case R 1.04 C / W th (ch-c) * T =25C C www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/5 Not Recommended for New Designs 26.5 16.5 14.8 2.0 14.5 4.5 2.5 0.44 16.5 10.0 3.5Data Sheet R6020ANZ Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 100 nA V = 30V, V =0V GSS GS DS Drain-source breakdown voltage V 600 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - - 100 AV =600V, V =0V DSS DS GS Gate threshold voltage V 2.95 - 4.15 V V =10V, I =1mA GS (th) DS D Static drain-source on-state * R I =10A, V =10V - 0.17 0.22 DS (on) D GS resistance * Forward transfer admittance l Y l7 - - S V =10V, I =10A fs DS D Input capacitance C - 2040 - pF V =25V iss DS Output capacitance C - 1660 - pF V =0V oss GS Reverse transfer capacitance C - 70 - pF f=1MHz rss Turn-on delay time t - 40 - ns V 300V, I =10A d(on) * DD D Rise time t - 60 - ns V =10V r * GS Turn-off delay time t - 230 - ns R =30 d(off) L * Fall time t - 70 - ns R =10 f * G Total gate charge Q - 65 - nC V 300V g * DD Gate-source charge Q - 10 - nC I =20A * gs D Gate-drain charge Q - 25 - nC V =10V gd GS * *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 1.5 V I =20A, V =0V * SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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