R6020FNJ Datasheet Nch 600V 20A Power MOSFET llOutline TO-263 V 600V DSS SC-83 R (Max.) 0.28 DS(on) LPT(S) I 20A D P 304W D llInner circuit llFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (V ) guaranteed to GSS be 30V. 5) Drive circuits can be simple. 6) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Power Supply Basic ordering unit (pcs) 1000 Taping code TL Marking R6020FNJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 T = 25C I 20 A C D Continuous drain current *1 T = 100C I 9.6 A C D *2 I Pulsed drain current 80 A DP V Gate - Source voltage 30 V GSS *3 I Avalanche current, single pulse 10 A AS *3 E Avalanche energy, single pulse 26.7 mJ AS *4 E Avalanche energy, repetitive 3.5 mJ AR Power dissipation (T = 25C) P 304 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg Reverse diode dv/dt dv/dt 15 V/ns www.rohm.com 1/13 20160324 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs R6020FNJ Datasheet llAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 20A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125 j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 0.41 /W thJC Thermal resistance, junction - ambient R - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 10A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS Zero gate voltage T = 25C I - 1 100 A DSS j drain current T = 125C - - 10 j Gate - Source leakage current I V = 30V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3 - 5 V GS(th) DS D V = 10V, I = 10A GS D Static drain - source *6 R T = 25C - 0.22 0.28 j DS(on) on - state resistance T = 125C - 0.44 - j R Gate resistance f = 1MHz, open drain - 13.4 - G www.rohm.com 2/13 2016 ROHM Co., Ltd. All rights reserved. 20160324 - Rev.002 Not Recommended for New Designs