X-On Electronics has gained recognition as a prominent supplier of R6047ENZ1C9 MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6047ENZ1C9 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6047ENZ1C9 ROHM

R6047ENZ1C9 electronic component of ROHM
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See Product Specifications
Part No.R6047ENZ1C9
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: R6047ENZ1C9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 4.81
10 : USD 4.1619
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.9964
10 : USD 3.5444
30 : USD 3.2763
100 : USD 3.0044
500 : USD 2.8787
1000 : USD 2.8224
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 7.2112
10 : USD 4.6697
100 : USD 4.1463
250 : USD 4.0642
450 : USD 3.9
900 : USD 3.7255
2250 : USD 3.7255
4950 : USD 3.6845
9900 : USD 3.5716
N/A

Obsolete
0
MOQ : 9
Multiples : 9
9 : USD 9.2347
N/A

Obsolete
0
MOQ : 9
Multiples : 9
9 : USD 7.6226
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the R6047ENZ1C9 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6047ENZ1C9 and other electronic components in the MOSFETs category and beyond.

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R6047ENZ1 Nch 600V 47A Power MOSFET Data Sheet l Outline V 600V DSS TO-247 R (Max.) 0.072W DS(on) I 47A D (3) (2) P 120W (1) D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (V ) guaranteed to be 20V. GSS 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Tube Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 450 Switching Power Supply Taping code C9 Marking R6047ENZ1 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 T = 25C I 47 A c D Continuous drain current *1 T = 100C A I 25.5 c D *2 Pulsed drain current I 141 A D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse 1135 mJ E AS *3 Avalanche energy, repetitive E 1.72 mJ AR I Avalanche current, repetitive 9.3 A AR Power dissipation (T = 25C) P 120 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *4 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.03 - Rev.B 1/12 ObsoleteData Sheet R6047ENZ1 lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V DS Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 1.04 C/W thJC Thermal resistance, junction - ambient R - - 30 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 mA DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2 - 4 V GS (th) DS D V = 10V, I = 25.8A GS D Static drain - source *5 T = 25C R - 0.066 0.072 W j DS(on) on - state resistance T = 125C - 0.140 - j R Gate input resistance f = 1MHz, open drain - 0.8 - W G www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.03 - Rev.B 2/12 Obsolete

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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