X-On Electronics has gained recognition as a prominent supplier of RCJ160N20TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RCJ160N20TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RCJ160N20TL ROHM

RCJ160N20TL electronic component of ROHM
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Part No.RCJ160N20TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 200V 16A Automotive 3-Pin(2+Tab) LPTS T/R
Datasheet: RCJ160N20TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.584 ea
Line Total: USD 1.58 
Availability - 1054
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1054
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.584
10 : USD 1.331
100 : USD 0.9878
500 : USD 0.8327
1000 : USD 0.7898

97
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 33
Multiples : 1
33 : USD 1.2512
50 : USD 1.2107
100 : USD 0.8857

970
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 72
Multiples : 1
72 : USD 1.7836
100 : USD 1.2638

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Continuous Drain Current
Power Dissipation
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Polarity
Drain-Source On-Volt
Number Of Elements
Package Type
Gate-Source Voltage Max
Configuration
Series
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RCJ160N20TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RCJ160N20TL and other electronic components in the MOSFETs category and beyond.

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RCJ160N20 Nch 200V 16A Power MOSFET Datasheet Outline (2) V 200V DSS LPT(S) (SC-83) R (Max.) 180m DS(on) I 16A D (1) P 85W (3) D Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. 1 (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 24 Switching Power Supply Type Quantity (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ160N20 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 16 A c D Continuous drain current *1 T = 100C I 8.7 A c D *2 Pulsed drain current A I 64 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 20.7 mJ E AS *3 Avalanche current I 8.0 A AR T = 25C P 85 W c D Power dissipation *4 P 1.56 W T = 25C D a T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 1/12Data Sheet RCJ160N20 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 1.46 C/W Thermal resistance, junction - case thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - -10 T = 25C j Zero gate voltage drain current I A DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 8.0A - 135 180 GS D Static drain - source *5 V = 10V, I = 8.0A R m GS D DS(on) on - state resistance - 295 410 T = 125C j g V = 10V, I = 8.0A Forward transfer admittance 48 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.C 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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