RCX080N25 Nch 250V 8A Power MOSFET Datasheet lOutline V 250V DSS TO-220FM R (Max.) 600mW DS(on) I 8A D (3) (2) P 35W (1) D lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Quantity (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX080N25 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 250 V DSS *1 T = 25C I 8 A c D Continuous drain current *1 T = 100C A I 4.3 c D *2 Pulsed drain current I 32 A D,pulse Gate - Source voltage V V 30 GSS *3 Avalanche energy, single pulse E 4.66 mJ AS *3 Avalanche current I 4 A AS T = 25C P 35 W c D Power dissipation *4 P T = 25C 2.23 W D a Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 1/12Data Sheet RCX080N25 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.57 C/W thJC *4 R - - 56 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS Zero gate voltage I - - 10 mA DSS drain current T = 25C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS (th) DS D V = 10V, I = 4.0A - 460 600 GS D Static drain - source *5 V = 10V, I = 4.0A R mW GS D DS(on) on - state resistance - 910 1280 T = 125C j Forward transfer admittance g V = 10V, I = 4.0A 2.2 4.4 - S fs DS D www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 2/12
