X-On Electronics has gained recognition as a prominent supplier of RF4E080BNTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RF4E080BNTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RF4E080BNTR ROHM

RF4E080BNTR electronic component of ROHM
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See Product Specifications
Part No.RF4E080BNTR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
Datasheet: RF4E080BNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2531 ea
Line Total: USD 1.27 
Availability - 2900
Ship by Tue. 17 Dec to Fri. 20 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2900
Ship by Tue. 17 Dec to Fri. 20 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2531
50 : USD 0.223
150 : USD 0.2102
500 : USD 0.1941
3000 : USD 0.187
6000 : USD 0.1828

6743
Ship by Fri. 06 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6512
10 : USD 0.5423
100 : USD 0.3894
500 : USD 0.319
1000 : USD 0.2948
3000 : USD 0.2607
6000 : USD 0.2596
9000 : USD 0.2585
24000 : USD 0.2574

2865
Ship by Fri. 06 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.854
10 : USD 0.6958
65 : USD 0.2688
177 : USD 0.2534

5335
Ship by Tue. 10 Dec to Mon. 16 Dec
MOQ : 39
Multiples : 1
39 : USD 1.0465
50 : USD 0.8727
100 : USD 0.5997
200 : USD 0.598
500 : USD 0.4777
1000 : USD 0.4372
3000 : USD 0.3542

2910
Ship by Tue. 10 Dec to Mon. 16 Dec
MOQ : 286
Multiples : 1
286 : USD 0.5122

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Subcategory
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We are delighted to provide the RF4E080BNTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RF4E080BNTR and other electronic components in the MOSFETs category and beyond.

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RF4E080BN Datasheet Nch 30V 8A Middle Power MOSFET llOutline DFN2020-8S V 30V DSS R (Max.) 17.6m DS(on) HUML2020L8 I 8A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (HUML2020L8). 3) Pb-free lead plating RoHS compliant. 4) 100% Rg and UIS tested. 5) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking HB llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 8 A D *1 I Pulsed drain current 32 A DP V Gate - Source voltage 20 V GSS *2 I Avalanche current, single pulse 2.5 A AS *2 E Avalanche energy, single pulse 4.6 mJ AS *3 P Power dissipation 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160706 - Rev.002 RF4E080BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = 250A Gate threshold voltage 1.0 - 2.0 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 8A - 13.5 17.6 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 8A - 18.9 24.6 GS D R Gate resistance f=1MHz, open drain - 2.8 - G Forward Transfer *4 Y V = 5V, I = 8A 5 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 L 1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu Board (40400.8mm) *4 Pulsed www.rohm.com 2/10 20160706 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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