X-On Electronics has gained recognition as a prominent supplier of RF4E110GNTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RF4E110GNTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RF4E110GNTR ROHM

RF4E110GNTR electronic component of ROHM
RF4E110GNTR ROHM
RF4E110GNTR MOSFETs
RF4E110GNTR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RF4E110GNTR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
Datasheet: RF4E110GNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4125 ea
Line Total: USD 0.41 
Availability - 4915
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
67
Ship by Fri. 09 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 1.6974
10 : USD 1.3852
30 : USD 0.9228
100 : USD 0.726
500 : USD 0.6637
1000 : USD 0.6306

4915
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.4125
10 : USD 0.325
100 : USD 0.2496
250 : USD 0.2277
500 : USD 0.1892
1000 : USD 0.1738
3000 : USD 0.1694
6000 : USD 0.1661

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the RF4E110GNTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RF4E110GNTR and other electronic components in the MOSFETs category and beyond.

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RF4E110GN Datasheet Nch 30V 11A Middle Power MOSFET llOutline DFN2020-8S V 30V DSS R (Max.) 11.3m DS(on) HUML2020L8 I 11A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance. 2) High power small mold package (HUML2020L8). 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking HG llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 11 A D *1 I Pulsed drain current 44 A DP V Gate - Source voltage 20 V GSS *2 I Avalanche current, single pulse 3.5 A AS *2 E Avalanche energy, single pulse 9.5 mJ AS *3 P Power dissipation 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160517 - Rev.002 RF4E110GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 28 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = 250A Gate threshold voltage 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3.87 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 11A - 8.7 11.3 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 11A - 11.7 16.5 GS D R Gate resistance f=1MHz, open drain - 2.5 - G Forward Transfer *4 Y V = 5V, I = 11A 6 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu Board (40400.8mm) *4 Pulsed www.rohm.com 2/10 20160517 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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