RHK003N06T146 ROHM

RHK003N06 Transistors 4V Drive Nch MOS FET RHK003N06 z Structure z External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 z Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.95 0.95 0.15 1.9 (1)Source zApplications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol : RKS z Packaging specifications and hFE z Inner circuit (3) Package Taping Type Code T146 Basic ordering unit (pieces) 3000 (2) RHK003N06 2 (1) Source 1 (2) Gate (3) Drain 1 ESD PROTECTION DIODE (1) 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage V 20 V GSS Continuous ID 300 mA Drain current 1 Pulsed IDP 1.2 A Source current Continuous IS 200 mA (Body diode) 1 Pulsed I 800 mA SP 2 Total power dissipation PD 200 mW Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 625 C/W Each terminal mounted on a recommended land 1/2 1.6 2.8 0.3Min.RHK003N06 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 60 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 60V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 0.7 1.0 ID= 300mA, VGS= 10V Static drain-source on-state R DS (on) resistance 1.1 1.5 I = 300mA, V = 4V D GS Forward transfer admittance Y 0.2 SV = 10V, I = 300mA fs DS D Input capacitance Ciss 33 pF VDS= 10V Output capacitance Coss 14 pF VGS=0V Reverse transfer capacitance Crss 9 pF f=1MHz Turn-on delay time t 6 ns VDD 30V d (on) ID= 150mA Rise time tr 5 ns VGS= 10V Turn-off delay time td (off) 13 ns RL=200 Fall time tf 80 ns RG=10 Total gate charge Q 3 6nC V 30V g DD Gate-source charge Qgs 0.6 nC VGS= 10V Gate-drain charge Qgd0.5 nC ID= 300mA Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 300mA, V =0V S GS Pulsed 2/2