X-On Electronics has gained recognition as a prominent supplier of RJ1G08CGNTLL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RJ1G08CGNTLL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RJ1G08CGNTLL ROHM

RJ1G08CGNTLL electronic component of ROHM
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Part No.RJ1G08CGNTLL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 40V 80A POWER
Datasheet: RJ1G08CGNTLL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.9834 ea
Line Total: USD 983.4 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 0.9834
2000 : USD 0.9438

   
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We are delighted to provide the RJ1G08CGNTLL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJ1G08CGNTLL and other electronic components in the MOSFETs category and beyond.

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RJ1G08CGN Datasheet Nch 40V 80A Power MOSFET llOutline TO-263AB V 40V DSS R (Max.) 5.6m DS(on) LPT(L) I 80A D P 78W D llFeatures llInner circuit 1) Low on - resistance 2) High power small mold package (LPTL) 3) Pb-free lead plating ; RoHS compliant 4) 100% UIS tested llApplication llPackaging specifications Embossed Switching Packing Tape Basic ordering unit (pcs) 1000 Type Taping code TLL RJ1G08CGN Marking llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 40 V DSS *1 Continuous drain current V = 10V I 80 A GS D *2 I Pulsed drain current 160 A DP V Gate - Source voltage 20 V GSS *3 Avalanche current, single pulse I 30 A AS *3 E Avalanche energy, single pulse 35 mJ AS *1 Power dissipation P 78 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170117 - Rev.002 RJ1G08CGN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 1.6 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 26.2 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 500 nA GSS GS DS V Gate threshold voltage V = V , I = 500A 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -4.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 80A - 4.2 5.6 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 40A - 5.0 6.7 GS D R Gate resistance f = 1MHz, open drain - 3.4 - G Forward Transfer *4 |Y | V = 5V, I = 40A 25 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.05mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Pulsed www.rohm.com 2/11 20170117 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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