DMN3018SFGQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I max Low R ensures on state losses are minimized
D DS(ON)
BV R max
DSS DS(ON)
T = +25C Small form factor thermally efficient package enables higher
A
density end products
21m @ V = 10V 8.5A
GS
30V
Occupies just 33% of the board area occupied by SO-8 enabling
35m @ V = 4.5V 6.6A
GS
smaller end product
ESD Protected Gate
Description
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
This MOSFET is designed to meet the stringent requirements of Halogen and Antimony Free. Green Device (Note 3)
automotive applications. It is qualified to AEC-Q101, supported by a Qualified to AEC-Q101 Standards for High Reliability
PPAP. PPAP Capable (Note 4)
Applications Mechanical Data
Backlighting
Case: POWERDI 3333-8
Power Management Functions
Case Material: Molded Plastic,Gree Molding Compound.
DC-DC Converters
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.072 grams (Approximate)
D
Pin 1
S
S
S
G
G
D
ESD PROTECTED
D
D
Gate Protection
D S
Diode
Top View
Bottom View
Top View Internal Schematic
View
S Pin 1
S 1 8
S G Vie
2 7
S Pin 1
D 3 6 S 1 8
D S G
D 4 5
Vie D w 2 7
D 3 6
D
D 4 5
D
w
Ordering Information (Note 5)
Part Number Case Packaging
DMN3018SFGQ-7 POWERDI 3333-8 2000/Tape & Reel
DMN3018SFGQ-13 POWERDI 3333-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN3018SFGQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 25 V
GSS
Steady T = +25C 8.5
A
I A
D
State 6.8
T = +70C
A
Continuous Drain Current (Note 7) V = 10V
GS
T = +25C 11.3
A
t<10s A
I
D
9.1
T = +70C
A
Steady T = +25C 6.6
A
I A
D
State 5.3
T = +70C
A
Continuous Drain Current (Note 7) V = 4.5V
GS
T = +25C 8.7
A
t<10s A
I
D
7.0
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 7) I 2.5 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 60 A
DM
Avalanche Current (Note 8) L = 0.1mH I 18 A
AS
Avalanche Energy (Note 8) L = 0.1mH E 16 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) 1.0 W
P
D
Steady State 126
Thermal Resistance, Junction to Ambient (Note 6) C/W
R
JA
t<10s 71
Total Power Dissipation (Note 7) 2.2 W
P
D
Steady State 56
Thermal Resistance, Junction to Ambient (Note 7)
R
JA
t<10s 31
C/W
Thermal Resistance, Junction to Case R 7.0
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 24V, V = 0V
DSS DS GS
Gate-Source Leakage I 10 A V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage V 1 1.7 2.1 V V = V , I = 250A
GS(TH) DS GS D
16 21 V = 10V, I = 10A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
21 35
V = 4.5V, I = 8.5A
GS D
Diode Forward Voltage 0.5 1.2 V
V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance 697 pF
C
iss
V = 15V, V = 0V,
DS GS
Output Capacitance 97 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 67 pF
C
rss
Gate Resistance R 1.47 V = 0V, V = 0V, f = 1.0MHz
g DS GS
Total Gate Charge (V = 4.5V) Q 6.0 nC
GS g
Total Gate Charge (V = 10V) Q 13.2 nC
GS g V = 10V, V = 15V,
GS DS
Gate-Source Charge Q 2.2 nC I = 9A
gs D
Gate-Drain Charge Q 1.8 nC
gd
Turn-On Delay Time t 4.3 ns
D(ON)
Turn-On Rise Time 4.4 ns
t V = 15V, V = 10V,
R DD GS
Turn-Off Delay Time 20.1 ns R = 15, I = 1A, R = 6
t L D G
D(OFF)
Turn-Off Fall Time 4.1 ns
t
F
Reverse Recovery Time 7.3 ns
t
RR
IF = 9A, di/dt = 500A/s
Reverse Recovery Charge Q 7.9 nC
RR
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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DMN3018SFGQ March 2016
Diodes Incorporated
www.diodes.com
Document number: DS38691 Rev. 1 - 2
NEW PRODUCT