RJK005N03FRAT146 ROHM

RJK005N03FRA Datasheet Nch 30V 500mA Small Signal MOSFET llOutline SOT-346 V 30V DSS SC-59 R (Max.) 580m DS(on) SMT3 I 500mA D P 200mW D llFeatures llInner circuit 1) Low on-resistance 2) Ultra low voltage drive (2.5V drive) 3) AEC-Q101 Qualified llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code T146 Marking KV llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 500 mA D *1 I Pulsed drain current 2.0 A DP Gate - Source voltage V 12 V GSS *2 P Power dissipation 200 mW D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/5 2016 ROHM Co., Ltd. All rights reserved. 20160920 - Rev.001 RJK005N03FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 625 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 35.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 0.8 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.04 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 500mA - 400 580 GS D Static drain - source *3 R V = 4.0V, I = 500mA - 420 600 m DS(on) GS D on - state resistance V = 2.5V, I = 500mA - 650 940 GS D Forward Transfer *3 Y V = 10V, I = 500mA 500 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/5 20160920 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.