RJK005N03T146 ROHM

RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 z Structure z External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 z Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.95 0.95 0.15 1.9 (1)Source zApplications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol : KV z Packaging specifications and hFE z Inner circuit (3) Package Taping Type Code T146 Basic ordering unit (pieces) 3000 RJK005N03 (2) 2 (1) Source 1 (2) Gate (3) Drain (1) 1 ESD PROTECTION DIODE 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage V 12 V GSS Continuous ID 500 mA Drain current 1 Pulsed IDP 2.0 A Source current Continuous IS 200 mA (Body Diode) 1 Pulsed I 800 mA SP 2 Total power dissipation PD 200 mW Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 625 C/W Each terminal mounted on a recommended land 1/2 1.6 2.8 0.3Min.RJK005N03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 0.8 1.5 V VDS= 10V, ID= 1mA 400 580 m I = 500mA, V = 4.5V D GS Static drain-source on-state RDS (on) 420 600 m ID= 500mA, VGS= 4V resistance 650 940 m ID= 500mA, VGS= 2.5V Forward transfer admittance Yfs 0.5 SVDS= 10V, ID= 500mA Input capacitance C 60 pF V = 10V iss DS Output capacitance Coss 24 pF VGS=0V Reverse transfer capacitance Crss 12 pF f=1MHz Turn-on delay time t 9 ns VDD 15V d (on) ID= 250mA Rise time tr 11 ns VGS= 4V Turn-off delay time td (off) 16 ns RL=60 Fall time tf 31 ns RG=10 Q 2.0 4.0 nC V 24V Total gate charge g DD Gate-source charge Qgs 0.6 nC VGS= 4V Gate-drain charge Qgd0.7 nC ID= 500mA Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 500mA, V =0V S GS Pulsed 2/2