Preliminary Datasheet RJK03M0DPA 30V, 65A, 1.9m max. R07DS0764EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 08, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 56 7 8 D DD D 6 7 8 5 4 1, 2, 3 Source 4 Gate G 1 4 3 2 5, 6, 7, 8 Drain SS S 12 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 65 A D Note1 Drain peak current I 260 A D(pulse) Body-drain diode reverse drain current I 65 A DR Note 2 Avalanche current I 24 A AP Note 2 Avalanche energy E 57.6 mJ AS Note3 Channel dissipation Pch 50 W Note3 Channel to case thermal impedance ch-c 2.5 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS0764EJ0200 Rev.2.00 Page 1 of 6 Feb 08, 2013 RJK03M0DPA Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.5 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 24 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 1.6 1.9 m I = 32.5 A, V = 10 V DS(on) D GS Note4 resistance R 1.9 2.5 m I = 32.5 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 160 S I = 32.5 A, V = 5 V fs D DS Input capacitance Ciss 4500 6300 pF V = 10 V DS V = 0 GS Output capacitance Coss 705 pF f = 1 MHz Reverse transfer capacitance Crss 400 pF Gate Resistance Rg 1.2 2.4 Total gate charge Qg 33.0 nC V = 10 V DD V = 4.5 V GS Gate to source charge Qgs 12.6 nC I = 65 A D Gate to drain charge Qgd 8.5 nC Turn-on delay time t 7.5 ns V = 10 V, I = 32.5 A d(on) GS D V 10 V Rise time t 4.5 ns DD r R = 0.31 L Turn-off delay time t 72 ns d(off) Rg = 4.7 Fall time t 24 ns f Note4 Bodydrain diode forward voltage V 0.83 1.08 V I = 65 A, V = 0 DF F GS Bodydrain diode reverse recovery t 10.9 ns I =65 A, V = 0 rr F GS time di / dt = 500 A/ s F Notes: 4. Pulse test R07DS0764EJ0200 Rev.2.00 Page 2 of 6 Feb 08, 2013