Preliminary Datasheet RJK0451DPB 40V, 35A, 7.0m max. R07DS0073EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Apr 09, 2013 Power Switching Features High speed switching Low on-resistance Capable of 4.5 V gate drive R = 5.5 m typ. (at V = 10 V) DS(on) GS Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 1, 2, 3 Source G 4 Gate 4 5 Drain 3 2 1 SSS 1 23 Application Switching Mode Power Supply Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 40 V DSS Gate to source voltage V 20 V GSS Drain current I 35 A D Note1 Drain peak current I 140 A D(pulse) Body-drain diode reverse drain current I 35 A DR Note 2 Avalanche current I 17.5 A AP Note 2 Avalanche energy E 24.5 mJ AS Note3 Channel dissipation Pch 45 W Channel to Case Thermal Resistance ch-C 2.78 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C This product is for the low voltage drive ( 10V). If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage (V ) which characteristics has been improved. GS(off) R07DS0073EJ0200 Rev.2.00 Page 1 of 6 Apr 09, 2013 RJK0451DPB Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 40 V I = 10 mA, V = 0 V (BR)DSS D GS Gate to source leak current I 0.1 A V = 20 V, V = 0 V GSS GS DS Zero gate voltage drain current I 1 A V = 40 V, V = 0 V DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 5.5 7.0 m I = 17.5 A, V = 10 V DS(on) D GS Note4 resistance R 7.0 9.6 m I = 17.5 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 47 S I = 17.5 A, V = 10 V fs D DS Input capacitance Ciss 2010 pF V = 10 V, V = 0 V, DS GS f = 1 MHz Output capacitance Coss 330 pF Reverse transfer capacitance Crss 140 pF Gate Resistance Rg 0.7 Total gate charge Qg 14 nC V = 10 V, V = 4.5 V, DD GS I = 35 A D Gate to source charge Qgs 7.0 nC Gate to drain charge Qgd 3.0 nC Turn-on delay time t 13 ns V = 10 V, I = 17.5 A, d(on) GS D V 10 V, R = 0.57 , Rise time t 4.8 ns DD L r Rg = 4.7 Turn-off delay time t 48 ns d(off) Fall time t 6.0 ns f Note4 Bodydrain diode forward voltage V 0.83 1.1 V I = 35 A, V = 0 V DF F GS Bodydrain diode reverse recovery t 28 ns I = 35 A, V = 0 V rr F GS time di / dt = 100 A/ s F Notes: 4. Pulse test R07DS0073EJ0200 Rev.2.00 Page 2 of 6 Apr 09, 2013