X-On Electronics has gained recognition as a prominent supplier of RJK0451DPB-00#J5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RJK0451DPB-00#J5 MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RJK0451DPB-00#J5 Renesas

RJK0451DPB-00#J5 electronic component of Renesas
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Part No.RJK0451DPB-00#J5
Manufacturer: Renesas
Category: MOSFETs
Description: Trans MOSFET N-CH 40V 35A 5-Pin(4+Tab) LFPAK T/R
Datasheet: RJK0451DPB-00#J5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
13: USD 2.4793 ea
Line Total: USD 32.23 
Availability - 0
MOQ: 13  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 13
Multiples : 1
13 : USD 2.4793
50 : USD 2.0154
100 : USD 1.962
200 : USD 1.9263

   
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Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Gate-Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the RJK0451DPB-00#J5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJK0451DPB-00#J5 and other electronic components in the MOSFETs category and beyond.

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Preliminary Datasheet RJK0451DPB 40V, 35A, 7.0m max. R07DS0073EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Apr 09, 2013 Power Switching Features High speed switching Low on-resistance Capable of 4.5 V gate drive R = 5.5 m typ. (at V = 10 V) DS(on) GS Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 1, 2, 3 Source G 4 Gate 4 5 Drain 3 2 1 SSS 1 23 Application Switching Mode Power Supply Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 40 V DSS Gate to source voltage V 20 V GSS Drain current I 35 A D Note1 Drain peak current I 140 A D(pulse) Body-drain diode reverse drain current I 35 A DR Note 2 Avalanche current I 17.5 A AP Note 2 Avalanche energy E 24.5 mJ AS Note3 Channel dissipation Pch 45 W Channel to Case Thermal Resistance ch-C 2.78 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C This product is for the low voltage drive ( 10V). If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage (V ) which characteristics has been improved. GS(off) R07DS0073EJ0200 Rev.2.00 Page 1 of 6 Apr 09, 2013 RJK0451DPB Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 40 V I = 10 mA, V = 0 V (BR)DSS D GS Gate to source leak current I 0.1 A V = 20 V, V = 0 V GSS GS DS Zero gate voltage drain current I 1 A V = 40 V, V = 0 V DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 5.5 7.0 m I = 17.5 A, V = 10 V DS(on) D GS Note4 resistance R 7.0 9.6 m I = 17.5 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 47 S I = 17.5 A, V = 10 V fs D DS Input capacitance Ciss 2010 pF V = 10 V, V = 0 V, DS GS f = 1 MHz Output capacitance Coss 330 pF Reverse transfer capacitance Crss 140 pF Gate Resistance Rg 0.7 Total gate charge Qg 14 nC V = 10 V, V = 4.5 V, DD GS I = 35 A D Gate to source charge Qgs 7.0 nC Gate to drain charge Qgd 3.0 nC Turn-on delay time t 13 ns V = 10 V, I = 17.5 A, d(on) GS D V 10 V, R = 0.57 , Rise time t 4.8 ns DD L r Rg = 4.7 Turn-off delay time t 48 ns d(off) Fall time t 6.0 ns f Note4 Bodydrain diode forward voltage V 0.83 1.1 V I = 35 A, V = 0 V DF F GS Bodydrain diode reverse recovery t 28 ns I = 35 A, V = 0 V rr F GS time di / dt = 100 A/ s F Notes: 4. Pulse test R07DS0073EJ0200 Rev.2.00 Page 2 of 6 Apr 09, 2013

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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