RJK0656DPB-00#J5 Renesas

Preliminary Datasheet RJK0656DPB 60V, 40A, 5.6m max. R07DS1054EJ0200 (Previous: REJ03G1882-0100) Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 09, 2013 Features High speed switching Low drive current Low on-resistance R = 4.5 m typ. (at V = 10 V) DS(on) GS Pb-free Halogen-free High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 1, 2, 3 Source 4 G 4 Gate 4 5 Drain 3 2 1 SSS 1 23 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 40 A D Note1 Drain peak current I 160 A D(pulse) Body-drain diode reverse drain current I 40 A DR Note 2 Avalanche current I 40 A AP Note 2 Avalanche energy E 12 mJ AS Note3 Channel dissipation Pch 65 W Channel to Case Thermal Resistance ch-C 1.92 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at L=10uH, Tch = 25 C, Rg 50 3. Tc = 25C R07DS1054EJ0200 Rev.2.00 Page 1 of 6 Apr 09, 2013 RJK0656DPB Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin TypMaxUnitTest Conditions Drain to source breakdown voltage V 60 V I = 10 mA, V = 0 V (BR)DSS D GS Gate to source leak current I 0.1 A V = 20 V, V = 0 V GSS GS DS Zero gate voltage drain current I 1 A V = 60 V, V = 0 V DSS DS GS Gate to source cutoff voltage V 2.0 4.0 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state resistance R 4.5 5.6 m I = 20 A, V = 10 V DS(on) D GS Note4 Forward transfer admittance y 58 S I = 20 A, V = 10 V fs D DS Input capacitance Ciss 3000 pF V = 10 V, V = 0 V, DS GS f = 1 MHz Output capacitance Coss 680 pF Reverse transfer capacitance Crss 175 pF Gate Resistance Rg 0.5 Total gate charge Qg 40 nC V = 25 V, V = 10 V, DD GS I = 40 A Gate to source charge Qgs 13 nC D Gate to drain charge Qgd 7.0 nC Turn-on delay time t 16 ns V = 10 V, I = 20 A, d(on) GS D V 30 V, R = 1.5 , DD L Rise time t 9.0 ns r Rg = 4.7 Turn-off delay time t 36 ns d(off) Fall time t 12 ns f Note4 Bodydrain diode forward voltage V 0.8 1.1 V I = 40 A, V = 0 V DF F GS Bodydrain diode reverse recovery time t 44 ns I = 40 A, V = 0 V rr F GS di / dt = 100 A/ s F Notes: 4. Pulse test R07DS1054EJ0200 Rev.2.00 Page 2 of 6 Apr 09, 2013