Preliminary Datasheet RJK1056DPB 100V, 25A, 14m max. R07DS1059EJ0200 (Previous: REJ03G1888-0100) Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 11, 2013 Features High speed switching Low drive current Low on-resistance R = 11 m typ. (at V = 10 V) DS(on) GS Pb-free Halogen-free High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 1, 2, 3 Source 4 G 4 Gate 4 5 Drain 3 2 1 SSS 1 23 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 100 V DSS Gate to source voltage V 20 V GSS Drain current I 25 A D Note1 Drain peak current I 100 A D(pulse) Body-drain diode reverse drain current I 25 A DR Note 2 Avalanche current I 25 A AP Note 2 Avalanche energy E 6.3 mJ AS Note3 Channel dissipation Pch 65 W Channel to Case Thermal Resistance ch-C 1.92 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at L=10uH, Tch = 25 C, Rg 50 3. Tc = 25C R07DS1059EJ0200 Rev.2.00 Page 1 of 6 Apr 11, 2013 RJK1056DPB Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin TypMaxUnitTest Conditions Drain to source breakdown voltage V 100 V I = 10 mA, V = 0 V (BR)DSS D GS Gate to source leak current I 0.1 A V = 20 V, V = 0 V GSS GS DS Zero gate voltage drain current I 1 A V = 100 V, V = 0 V DSS DS GS Gate to source cutoff voltage V 2.0 4.0 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state resistance R 11 14 m I = 12.5 A, V = 10 V DS(on) D GS Note4 Forward transfer admittance y 42 S I = 12.5 A, V = 10 V fs D DS Input capacitance Ciss 3000 pF V = 10 V, V = 0 V, DS GS f = 1 MHz Output capacitance Coss 490 pF Reverse transfer capacitance Crss 120 pF Gate Resistance Rg 0.5 Total gate charge Qg 41 nC V = 50 V, V = 10 V, DD GS I = 25 A Gate to source charge Qgs 13 nC D Gate to drain charge Qgd 7.5 nC Turn-on delay time t 16 ns V = 10 V, I = 12.5 A, d(on) GS D V 30 V, R = 2.4 , DD L Rise time t 4.5 ns r Rg = 4.7 Turn-off delay time t 36 ns d(off) Fall time t 6.5 ns f Note4 Bodydrain diode forward voltage V 0.8 1.1 V I = 25 A, V = 0 V DF F GS Bodydrain diode reverse recovery time t 52 ns I = 25 A, V = 0 V rr F GS di / dt = 100 A/ s F Notes: 4. Pulse test R07DS1059EJ0200 Rev.2.00 Page 2 of 6 Apr 11, 2013