Preliminary Datasheet
RJP5001APP-M0
R07DS0750EJ0100
Rev.1.00
Nch IGBT for Strobe Flash Apr 26, 2012
Features
V : 500 V
CES
TO-220FL package
High Speed Switching
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
2
1 : Gate
2 : Collector
1 3 : Emitter
1
2
3
3
Applications
Strobe flash
Maximum Ratings
(Tc = 25C)
Parameter Symbol Ratings Unit Conditions
Collector-emitter voltage V 500 V V = 0 V
CES GE
Gate-emitter voltage V 17 V V = 0 V,
GES CE
Refer to item 4 under Notes
on the Actual Specifications
Collector current (Pulse) I 300 A C = 2000 F
CM M
(see performance curve)
Maximum power dissipation P 45 W
C
Junction temperature Tj 40 to +150 C
Storage temperature Tstg 40 to +150 C
Mass 1.5 g Typical value
R07DS0750EJ0100 Rev.1.00 Page 1 of 4
Apr 26, 2012 RJP5001APP-M0 Preliminary
Electrical Characteristics
(Tj = 25C)
Parameter Symbol Min. Typ. Max. Unit Test conditions
Collector-emitter breakdown voltage V 500 V I = 100 A, V = 0 V
(BR)CES C GE
Collector-emitter leakage current I 10 A V = 500 V, V = 0 V
CES CE GE
Gate-emitter leakage current I 0.1 A V = 17 V, V = 0 V
GES GE CE
Gate-emitter threshold voltage V 1.3 2.7 V V = 10 V, I = 1 mA
GE(th) CE C
Collector-emitter saturation voltage V 4.7 10 V I = 300 A, V = 12 V
CE(sat) C GE
Input capacitance Ciss 2050 pF V = 25 V
CE
V = 0 V
GE
Output capacitance Coss 130 pF
f = 1 MHz
Reverse transfer capacitance Crss 12 pF
Turn-on delay time t 0.10 s I = 300 A
d(on) C
V = 12 V
Rise time t 0.43 s GE
r
V = 300 V
CC
Turn-off delay time t 0.20 s
d(off)
R = 30
G
Fall time t 0.55 s
f
Performance Curves
Maximum Pulse Collector Current
400
C = 2000 F
M
Tc 70C
300
200
100
0
024 8 12 16 0
Gate-Emitter Voltage V (V)
GE
R07DS0750EJ0100 Rev.1.00 Page 2 of 4
Apr 26, 2012
Pulse Collector Current I (A)
CP