RKD751KP#R0 Renesas

RKD751KP Silicon Schottky Barrier Diode for Detector REJ03G1485-0200 Rev.2.00 Feb 22, 2007 Features High forward current, Low capacitance. Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm0.3mm Size leadless type) Ordering Information Part No. Laser Mark Package Name Package Code RKD751KP K MP6 PXSN0002ZB-A Pin Arrangement Cathode mark Mark 1 2 1. Cathode 2. Anode Rev.2.00 Feb 22, 2007 page 1 of 4 KRKD751KP Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Repetitive peak reverse voltage V 5 V RRM Reverse voltage V 3 V R Average rectified current I 30 mA O Junction temperature Tj 125 C Storage temperature Tstg 55 to +125 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Condition Reverse voltage V 3.0 V I = 1 mA R R Reverse current I 50 A V = 0.5 V R R Forward current I 35 mA V = 0.5 V F F Capacitance C 1.0 pF V = 0.5 V, f = 1 MHz R 1 ESD-Capability * 30 V C = 200 pF, R = 0 , Both forward L and reverse direction 1 pulse. Notes: 1. Failure criterion I > 100 A at V = 0.5 V R R 2. Please do not use the soldering iron due to avoid high stress to the MP6 package. Rev.2.00 Feb 22, 2007 page 2 of 4