1SS403TPH3F Toshiba

1SS403 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS403 High Voltage Switching Applications Unit: mm AEC-Q101 Qualified (Note1) Two-pin small packages are suitable for higher mounting densities. Excellent in forward current and forward voltage characteristics : VF (2) = 0.90 V (typ.) Fast reverse recovery time : trr = 60 ns (max) Small total capacitance : CT = 1.5 pF (typ.) Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 250 V RM Reverse voltage V 200 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O USC Surge current (10ms) I 2 A FSM JEDEC Power dissipation P (Note 4) 200 mW D JEITA TOSHIBA 1-1E1A T (Note 2) 150 j Junction temperature C Weight: 0.0045g (typ.) T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature range C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in H3F(T. Note 3: For devices with the ordering part number in other than H3F(T. Note 4: Mounted on a glass epoxy circuit board of 20 mm 20 mm, Pad dimension of 4 mm 4 mm. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 10 mA 0.72 1.0 F (1) F Forward voltage V V I = 100 mA 0.90 1.2 F (2) F I V = 50 V 0.1 R (1) R Reverse current A I V = 200 V 1.0 R (2) R Total capacitance C V = 0 V, f = 1 MHz 1.5 3.0 pF T R Reverse recovery time t I = 10 mA (Fig. 1) 10 60 ns rr F Start of commercial production 1998-10 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS403 Fig.1 Reverse Recovery Time (t ) Test Circuit rr Equivalent Circuit (Top View) Marking 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation