1SS413CT Schottky Barrier Diode Silicon Epitaxial 1SS413CT1SS413CT1SS413CT1SS413CT 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low forward voltage : V = 0.50 V (typ.) F(3) (2) Low reverse current : I = 0.5 A (max) R (3) Small total capacitance : C = 3.9 pF (typ.) t 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode CST2 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit Peak reverse voltage V 25 V RM Reverse voltage V 20 R Peak forward current I 100 mA FM Average rectified current I 50 mA O Power dissipation P (Note 1) 100 mW D Non-repetitive peak forward surge current I (Note 2) 1 A FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 20 mm 20 mm, Pad dimension of 4 mm 4 mm. Note 2: Measured with a 10 ms pulse. Start of commercial production 1999-02 2014-03-11 1 Rev.1.01SS413CT 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.33 V F(1) F Forward voltage V I = 5 mA 0.38 V F(2) F Forward voltage V I = 50 mA 0.50 0.55 V F(3) F Reverse current I V = 20 V 0.5 A R R Total capacitance C V = 0 V, f = 1 MHz 3.9 pF t R 6. 6. MarkingMarking 6. 6. MarkingMarking Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking 7. 7. Usage ConsiderationsUsage Considerations 7. 7. Usage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 8. 8. 8. 8. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) (Unit: mm)(Unit: mm)(Unit: mm)(Unit: mm) 2014-03-11 2 Rev.1.0