NTST20120CTG, NTSJ20120CTG, NTSB20120CT-1G, NTSB20120CTG, NTSB20120CTT4G www.onsemi.com Very Low Forward Voltage Trench-based Schottky VERY LOW FORWARD Rectifier VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER Exceptionally Low V = 0.54 V at I = 5 A F F RECTIFIERS 20 AMPERES, 120 VOLTS Features Fine Lithography Trenchbased Schottky Technology for Very Low PIN CONNECTIONS Forward Voltage and Low Leakage 1 Fast Switching with Exceptional Temperature Stability 2, 4 Low Power Loss and Lower Operating Temperature 3 Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance 4 4 High Surge Capability These are PbFree Devices Typical Applications Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display TO220AB I2PAK High Frequency and DCDC Converters CASE 221A CASE 418D 1 1 2 2 STYLE 6 STYLE 3 Freewheeling and ORing diodes 3 3 Reverse Battery Protection 4 Instrumentation Mechanical Characteristics Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 940 0.125 in Finish: All External Surfaces Corrosion Resistant and Terminal TO220FP D2PAK Leads are Readily Solderable CASE 221AH CASE 418B 1 Lead Temperature for Soldering Purposes: 260C Maximum for 2 3 10 sec ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 6 NTST20120CT/DNTST20120CTG, NTSJ20120CTG, NTSB20120CT1G, NTSB20120CTG, NTSB20120CTT4G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 120 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 130C) Per device 20 R C Per diode 10 Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 135C) Per device 40 R C Per diode 20 Nonrepetitive Peak Surge Current I 120 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 40 to +150 C J Storage Temperature T 40 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS NTST20120CTG Rating Symbol NTSB20120CT1G NTSB20120CTG NTSJ20120CTG Unit Maximum Thermal Resistance per Diode JunctiontoCase R 2.5 1.43 4.42 C/W JC JunctiontoAmbient 70 46.8 105 C/W R JA ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (I = 5 A, T = 25C) 0.62 F J (I = 10 A, T = 25C) 0.90 1.10 F J (I = 5 A, T = 125C) 0.54 F J (I = 10 A, T = 125C) 0.64 0.72 F J Maximum Instantaneous Reverse Current (Note 1) I R (V = 90 V, T = 25C) 12 A R J (V = 90 V, T = 125C) 6 mA R J (Rated dc Voltage, T = 25C) 700 A J (Rated dc Voltage, T = 125C) 17 100 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% www.onsemi.com 2