NTST20U100CT, NTSB20U100CT-1G, NTSJ20U100CTG, NTSB20U100CTG Very Low Forward Voltage NTST20U100CT, NTSB20U100CT 1G, NTSJ20U100CTG, NTSB20U100CTG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 130C) Per device 20 R C Per diode 10 Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 125C) Per device 40 R C Per diode 20 Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 40 to +150 C J Storage Temperature T 40 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS NTST20U100CTG, NTSB20U100CT 1G Rating Symbol NTSB20U100CTG NTSJ20U100CTG Unit Maximum Thermal Resistance per Diode Junction toCase R 2.5 1.24 4.20 C/W JC Junction toAmbient R 70 46.7 105 C/W JA ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (I = 5 A, T = 25C) 0.55 F J (I = 10 A, T = 25C) 0.65 0.79 F J (I = 5 A, T = 125C) 0.50 F J (I = 10 A, T = 125C) 0.58 0.68 F J Maximum Instantaneous Reverse Current (Note 1) I R (V = 70 V, T = 25C) 17 A R J (V = 70 V, T = 125C) 5.3 mA R J (Rated dc Voltage, T = 25C) 800 A J (Rated dc Voltage, T = 125C) 12 25 mA J 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%