NXPS20H100C,127 NXP

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses nxp.com use salesaddresses ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) NXP Semiconductors N.V. year . All rights reserved becomes WeEn Semiconductors Co., Ltd. year . All rights reserved If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors NXPS20H100C Dual power Schottky diode Rev. 2 8 June 2012 Product data sheet 1. Product profile 1.1 General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High junction temperature capability Negligible switching losses Low leakage current Optimised design to give low V and F high T j(max) 1.3 Applications DC to DC converters OR-ing diode Freewheeling diode Switched mode power supply rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 100 V RRM voltage I average forward square-wave pulse = 0.5 --10 A F(AV) current T 163 C per diode mb see Figure 1 see Figure 2 see Figure 3 I average output current square-wave pulse = 0.5 --20 A O(AV) T 161 C both diodes conducting mb T junction temperature - - 175 C j Static characteristics V forward voltage I =10A T = 25 C see Figure 6 --0.77V F F j I =10A T =125 C see Figure 6 - 0.59 0.64 V F j I reverse current V =100 V T =25C see Figure 7 -2 4.5 A R R j V =100 V T = 125 C see Figure 7 - 16mA R j TO-220AB