C3D02065E Wolfspeed

C3D02065E V = 650 V RRM Silicon Carbide Schottky Diode I (T =135C) = 4 A C F Z-Rec RRectifie Q = 4.8 nC c Features Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V TO-252-2 F Benefits Replace Bipolar with Unipolar Rectifiers PIN 1 Essentially No Switching Losses CASE PIN 2 Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies C3D02065E TO-252-2 C3D02065 Power Factor Correction - Typical PFC P : 300W-450W out Maximum Ratings Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V Surge Peak Reverse Voltage 650 V RSM V DC Blocking Voltage 650 V DC T =25C 8 C I Continuous Forward Current 4 A T =135C F C 2 T =162C C 12 T =25C, t =10 mS, Half Sine Wave D=0.3 C P I Repetitive Peak Forward Surge Current A FRM 9 T =110C, t =10 mS, Half Sine Wave D=0.3 C P 21 T =25C, t =10 mS, Half Sine Wave D=0.3 C P I Non-Repetitive Peak Forward Surge Current A FSM 19 T =110C, t =10 mS, Half Sine Wave D=0.3 C P I Non-Repetitive Peak Forward Surge Current 65 A T =25C, t =10 S, Pulse FSM C P 39.5 T =25C C P Power Dissipation W tot 17 T =110C C -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 C3D02065E Rev. -Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 2 A T =25C F J V Forward Voltage V F 1.8 2.4 I = 2 A T =175C F J 10 50 V = 650 V T =25C R J I Reverse Current A R 20 100 V = 650 V T =175C R J V = 650 V, I = 2A R F Q Total Capacitive Charge 4.8 nC di/dt = 500 A/ s C T = 25C J 120 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 12 pF V = 200 V, T = 25C, f = 1 MHz R J 11 V = 400 V, T = 25C, f = 1 MHz R J Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit R TO-252 Package Thermal Resistance from Junction to Case 3.8 C/W JC Typical Performance 4.0 1.0E-05 4.0 10 3.53.5 T = 25C J T = 75C J 8 8.0E-06 T = 125C J 3.03.0 T = 175C J 2.5 2.5 6.0E-066 CCuurrrreenntt 2255CC CCuurrrreenntt 2255CC 2.0 2.0 Current 75C Current 75C 4.0E-046 Current 125C 1.5 1.5 Current 125C T = 25C J Current 175C Current 175C T = 75C J 1.0 1.0 T = 125C J 2.0E-026 T = 175 J 0.5 0.5 0 0.0 0 0.0E+00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700 800 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700 800 V Forward Voltage (V) V Reverse Voltage (V) F R Forward Voltage Reverse Bias (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D02065E Rev. - I Forward Current (A) F FFoorrwwaarrd d CCururrreenntt RReevveerrssee CCuurrrreenntt ((AA)) I Reverse Current ( A) R