C3D03060E V = 600 V RRM Silicon Carbide Schottky Diode I (T =135C) = 5 A C F Z -Rec Rectifier Q = 7.6 nC c Features Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-252-2 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements PIN 1 Parallel Devices Without Thermal Runaway CASE PIN 2 Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C3D03060E TO-252-2 C3D03060 Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 600 V RRM V Surge Peak Reverse Voltage 600 V RSM V DC Blocking Voltage 600 V DC 11 T =25C C I Continuous Forward Current 5 A T =135C Fig. 3 F C 3 T = 158C C 18 T =25C, t =10 mS, Half Sine Wave D=0.3 C P I Repetitive Peak Forward Surge Current A FRM 13.5 T =110C, t =10 mS, Half Sine Wave D=0.3 C P 26 T =25C, t =10 mS, Half Sine Wave D=0.3 C P I Non-Repetitive Peak Forward Surge Current A FSM 23 T =110C, t =10 mS, Half Sine Wave D=0.3 C P I Non-Repetitive Peak Forward Surge Current 100 A T =25C, t =10 S, Pulse FSM C P 47 T =25C C P Power Dissipation W Fig. 4 tot 20 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-600V R -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 C3D03060E Rev. C, 4-2016Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.7 I = 3 A T =25C F J V Forward Voltage V Fig. 1 F 1.8 2.4 I = 3 A T =175C F J 4 20 V = 600 V T =25C R J I Reverse Current A Fig. 2 R 8 80 V = 600 V T =175C R J V = 400 V, I = 3A R F Q Total Capacitive Charge 7.6 nC di /dt = 500 A/S Fig. 5 C T = 25C J 166 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 14 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 11 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 1.1 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 3.2 C/W Fig. 8 JC Typical Performance 10 10 T = -55 C J 8 8 T = 25 C J T = 175 C J T = 75 C J T = 125 C J 6 6 T = 125 C T = 75 C J J T = 25 C J T = 175 C J 4 4 T = -55 C J 2 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1000 Foward Voltage, V (V) V (V) ReversVe Vo (V)ltage, V (V) F R F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D03060E Rev. C, 4-2016 FFoowwaarrdd CCuurrrreentnt,, II (A) I (A) F F RReevveerrssee LeLeaakkaaggee CCururrreenntt,, II (uA) RR I (mA) R