C3D04065A V = 650 V RRM Silicon Carbide Schottky Diode I (T =135C) = 6 A F C Z -Rec Rectifier Q = 10 nC c Features Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recover y Current Zero For ward Recover y Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V TO-220-2 F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency PIN 1 Reduction of Heat Sink Requirements CASE Parallel Devices WithoutThermal Runaway PIN 2 Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C3D04065A TO-220-2 C3D04065 Free Wheeling Diodes in Inver ter stages AC/DC conver ters Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V Surge Peak Reverse Voltage 650 V RSM V DC Blocking Voltage 650 V DC 13.5 T =25C C I Continuous For ward Current 6 A T =135C Fig. 3 F C 4 T =155C C 17 T =25C, t = 10 ms, Half Sine Wave C P I Repetitive Peak For ward Surge Current A FRM 12 T =110C, t = 10 ms, Half Sine Wave C P 30.5 T =25C, t = 10 ms, Half Sine Wave C p I Non-Repetitive Peak For ward Surge Current A Fig. 8 FSM 20 T =110C, t = 10 ms, Half Sine Wave C p 220 T =25C, t = 10 s, Pulse C P I Non-Repetitive Peak For ward Surge Current A Fig. 8 F,Max 160 T =110C, t = 10 s, Pulse C P 52 T =25C C P Power Dissipation W Fig. 4 tot 22.5 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-650V R 4.7 T =25C, t =10 ms 2 2 2 C P i dt i t value (Per Leg) A s 2 T =110C, t =10 ms C P -55 to T , T Operating Junction and StorageTemper ature C J stg +175 1 Nm M3 Screw TO-220 Mounting Torque 6-32 Screw 8.8 lbf-in 1 C3D04065A Rev. D, 08-2016Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.4 1.7 I = 4 A T =25C F J V For ward Voltage V Fig. 1 F 1.7 2.4 I = 4 A T =175C F J 6 30 V = 650 V T =25C R J I Reverse Current A Fig. 2 R 12 120 V = 650 V T =175C R J V = 400 V, I = 4 A R F Q Total Capacitive Charge 10 nC di /dt = 500 A/s Fig. 5 C T = 25C J 231 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 18.5 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6 R J 15 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 1.4 J V = 400 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recover y charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 2.9 C/W Fig. 9 JC Typical Performance 100 12 T = -55 C J 10 80 T = 25 C J = 75 C 8 T J T = 175 C J 60 T = 125 C J T = 125 C 6 J T = 175 C J T = 75 C 40 J 44 T = 25 C J T = -55 C 20 J 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 Foward Voltage, V (V) V (V) ReverseV Vo (V)ltage, V (V) F R F R Figure 1. For ward Characteristics Figure 2. Reverse Characteristics 2 C3D04065A Rev. D, 08-2016 FFoowwaarrdd CCurrurrenentt,, II (A) I (A) F F RReveveerrssee LLeeaakkaaggee CCuurrrreenntt,, II (uA) RR I ( mA) R