NTST60100CT, NTSB60100CT-1, NTSB60100CT, NTSJ60100CT Very Low Forward Voltage www.onsemi.com Trench-based Schottky Rectifier VERY LOW FORWARD VOLT- AGE, LOW LEAKAGE SCHOT- Exceptionally Low V = 0.36 V at I = 5 A F F TKY BARRIER RECTIFIERS 60 AMPERES, Features 100 VOLTS Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability PIN CONNECTIONS Low Power Loss and Lower Operating Temperature 1 Higher Efficiency for Achieving Regulatory Compliance 2, 4 Low Thermal Resistance 3 High Surge Capability Halide Free Devices Available 4 4 These are PbFree Packages Typical Applications Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display High Frequency and DCDC Converters TO220AB I2PAK CASE 221A CASE 418D Freewheeling and ORing diodes 1 1 2 2 STYLE 6 STYLE 3 3 3 Reverse Battery Protection Instrumentation 4 Mechanical Characteristics Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 940 0.125 in Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable TO220FP D2PAK Lead Temperature for Soldering Purposes: 260C Maximum for 1 CASE 221AH CASE 418B 2 10 sec 3 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 1 NTST60100CT/DNTST60100CT, NTSB60100CT 1, NTSB60100CT, NTSJ60100CT MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current at Rated V I A R F(AV) NTST60100CT, NTSB60100CT1 and NTSB60100CT (Rated V , T = 115C) per Device 60 R C (Rated V , T = 125C) per Diode 30 R C NTSJ60100CT (Rated V , T = 80C) per Device 30 R C (Rated V , T = 75C) per Diode 30 R C Peak Repetitive Forward Current (Rated V , Square Wave, 20 kHz) I A R FRM NTST60100CT, NTSB60100CT1 and NTSB60100CT (Rated V , T = 105C) per Device 120 R C (Rated V , T = 120C) per Diode 60 R C NTSJ60100CT (Rated V , T = 65C) per Device 30 R C (Rated V , T = 55C) per Diode 30 R C Nonrepetitive Peak Surge Current I 250 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 40 to +150 C J Storage Temperature T 40 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS NTST60100CT, NTSB60100CT1, NTSB60100CT Rating Symbol NTSJ60100CT Unit Maximum Thermal Resistance R C/W JC JunctiontoCase Per Diode 1.10 3.60 Per Device 0.67 3.17 ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (I = 5 A, T = 25C) 0.45 F J (I = 10 A, T = 25C) 0.52 F J (I = 15 A, T = 25C) 0.58 0.63 F J (I = 20 A, T = 25C) 0.63 F J (I = 30 A, T = 25C) 0.73 0.84 F J (I = 5 A, T = 125C) 0.36 F J (I = 10 A, T = 125C) 0.45 F J (I = 15 A, T = 125C) 0.53 0.58 F J (I = 20 A, T = 125C) 0.58 F J (I = 30 A, T = 125C) 0.66 0.70 F J Maximum Instantaneous Reverse Current (Note 1) I R (V = 80 V, T = 25C) 20 500 A R J (V = 80 V, T = 125C) 15 20 mA R J (Rated dc Voltage, T = 25C) 40 1000 A J (Rated dc Voltage, T = 125C) 30 85 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% www.onsemi.com 2