NTTD4401F FETKY Power MOSFET and Schottky Diode 20 V, 3.3 A PChannel with 20 V, 1.0 A Schottky Diode, Micro8 Package NTTD4401F SCHOTTKY DIODE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 20 V Average Forward Current (Rated V , T = 100C) I 1.0 A R A O Peak Repetitive Forward Current (Note 3) I 2.0 A FRM NonRepetitive Peak Surge Current (Note 4) I 20 A FSM THERMAL RESISTANCE RATINGS FET Schottky Max Rating Symbol Unit JunctiontoAmbient Steady State (Note 5) R 88 135 C/W JA JunctiontoAmbient Steady State (Note 6) R 160 250 C/W JA MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V 20 V (BR)DSS GS Zero Gate Voltage Drain Current (Note 7) I A V = 0 V, V = 16 V 1.0 DSS GS DS V = 0 V, T = 125C, V = 16 V 25 GS J DS GatetoSource Leakage Current I V = 0 V, V = 10 V 100 nA GSS DS GS ON CHARACTERISTICS Gate Threshold Voltage V V = V , I = 250 A 0.5 1.5 V GS(TH) GS DS D Negative Threshold V /T 2.5 mV/C GS(TH) J Temperature Coefficient DraintoSource On Resistance R m V = 4.5 V, I = 3.3 A 70 90 DS(on) GS D V = 2.5 V, I = 1.2 A 100 150 GS D Forward Transconductance g V = 10 V, I = 2.7 A 4.2 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 550 750 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 200 300 OSS V = 16 V DS Reverse Transfer Capacitance C 50 175 RSS Total Gate Charge Q 10 18 nC G(TOT) V = 4.5 V, V = 16 V, GS DS GatetoSource Gate Charge Q 1.5 3.0 GS I = 3.3 A D GatetoDrain Miller Charge Q 5.0 10 GD SWITCHING CHARACTERISTICS ns TurnOn Delay Time t 11 20 d(ON) Rise Time t 35 65 r V = 4.5 V, V = 10 V, GS DD I = 3.3 A, R = 6.0 D G TurnOff Delay Time t 33 60 d(OFF) Fall Time t 29 55 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 2.0 A 0.88 1.0 V SD GS S Reverse Recovery Time t 37 50 ns RR V = 0 V, d /dt = 100 A/ s, GS IS Charge Time t 16 a I = 3.3 A S Discharge Time t 21 b Reverse Recovery Charge Q 0.025 0.05 nC RR 3. Rated V , square wave, 20 kHz, T = 105C. R A 4. Surge applied at rated load conditions, halfwave, single phase, 60 Hz. 5. Surfacemounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq 1 oz including traces). 6. Surfacemounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq). 7. Body diode leakage current.