DATA SHEET www.onsemi.com MOSFET - Power, Single V R I (BR)DSS DS(on) D 3.8 m 10 V P-Channel, WDFN8 30 V 96 A 6.5 m 4.5 V -30 V, 3.8 m , -96 A S (1, 2, 3) NTTFS008P03P8Z G (4) Features PChannel MOSFET Ultra Low R to Improve System Efficiency DS(on) Advanced Package Technology in 3.3x3.3mm for Space Saving and Excellent Thermal Conduction D (5, 6, 7, 8) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING Typical Applications DIAGRAM Power Load Switch Protection: Reverse Current, Over Voltage, and Reverse Negative 8P03 WDFN8 Voltage AYWW CASE 483AW Battery Management MAXIMUM RATINGS (T = 25C unless otherwise noted) J 8P03 = Specific Device Code Parameter Symbol Value Unit A = Assembly Location Y = Year DraintoSource Voltage V 30 V DSS WW = Work Week GatetoSource Voltage V 25 V GS Continuous Drain Cur- T = 25C I 96 A D C rent R (Notes 1, 2) JC T = 85C 69 Steady ORDERING INFORMATION C State Power Dissipation R T = 25C P 50 W JC C D Device Package Shipping (Notes 1, 2) NTTFS008P03P8Z WDFN8 3000 / Tape & Continuous Drain Cur- I A T = 25C 22 A D (PbFree) Reel rent R (Notes 1, 2) JA T = 85C 16 Steady A For information on tape and reel specifications, State including part orientation and tape sizes, please Power Dissipation R T = 25C P 2.36 W JA A D refer to our Tape and Reel Packaging Specification (Notes 1, 2) Brochure, BRD8011/D. Pulsed Drain Current T = 25C, t = 10 s I 418 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg Range 150 Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State (Drain) R 2.5 C/W JC (Note 2) JunctiontoAmbient Steady State (Note 2) R 47 C/W JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 1 in , 2 oz. Cu pad. Assuming a 76mm x 76mm x 1.6mm board. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: October, 2021 Rev. 5 NTTFS008P03P8Z/DNTTFS008P03P8Z ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Volt- V / I = 250 A, ref to 25C 8 mV/ (BR)DSS D age Temperature Coefficient T C J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 24 V DS GatetoSource Leakage Current I V = 0 V, V = 25 V 10 A GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.9 mV/C I = 250 A, ref to 25C GS(TH) J D DraintoSource On Resistance R V = 10 V, I = 18 A 2.5 3.8 m DS(on) GS D V = 4.5 V, I = 14 A 4.3 6.5 GS D Froward Transconductance g V = 5 V, I = 14 A 74 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 5600 pF iss GS V = 15 V DS Output Capacitance C 1940 oss Reverse Transfer Capacitance C 1890 rss Total Gate Charge Q 134 nC G(TOT) Threshold Gate Charge Q 3 G(TH) V = 10 V, V = 15 V, GS DS I = 14 A D GatetoSource Charge Q 15 GS GatetoDrain Charge Q 51 GD Total Gate Charge Q V = 4.5 V, V = 15 V, 82 G(TOT) GS DS I = 14 A D SWITCHING CHARACTERISTICS, V = 4.5 V (Note 3) GS TurnOn Delay Time t 49 ns d(on) Rise Time t 248 r V = 4.5 V, V = 15 V, GS DS I = 14 A, R = 6 D G TurnOff Delay Time t 95 d(off) Fall Time t 187 f SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 19 ns d(on) Rise Time t 53 r V = 10 V, V = 15 V, GS DS I = 14 A, R = 6 D G TurnOff Delay Time t 201 d(off) Fall Time t 177 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, V T = 25C 0.77 1.3 SD GS J I = 14 A S T = 125C 0.63 J Reverse Recovery Time t 52 ns RR Charge Time t 21 a V = 0 V, dl /dt = 100 A/ s, GS s I = 14 A s Discharge Time t 30 b Reverse Recovery Charge Q 31 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. www.onsemi.com 2