NTTFS010N10MCL MOSFET, N-Channel, Shielded Gate, POWERTRENCH 100 V, 50 A, 10.6 m www.onsemi.com General Description This NChannel POWETRENCH MOSFET is produced using ELECTRICAL CONNECTION ONSemiconductors advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been S D optimized to minimize onstate resistance and yet maintain superior switching performance with best in class soft body diode. S D Features S D Shielded Gate MOSFET Technology G D Max r = 10.6 m at V = 10 V, I = 15 A DS(on) GS D Max r = 15.9 m at V = 4.5 V, I = 12 A DS(on) GS D N-Channel MOSFET 50% Lower Qrr than Other MOSFET Suppliers Lowers Switching Noise/EMI MSL1 Robust Package Design 8 7 65DDDD 100% UIL Tested RoHS Compliant Pin 1 Applications 12 3 4 GSS S Pin 1 Primary DCDC MOSFET Bottom Top Synchronous Rectifier in DCDC and ACDC WDFN8 (3.3x3.3, 0.65 P) Motor Drive CASE 511DY MARKING DIAGRAM N10L AYWW N10L = Device Code A = Assembly Location Y = Year Code WW = Work Week Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: May, 2019 Rev. 0 NTTFS010N10MCL/DNTTFS010N10MCL MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Unit V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS I Drain Current Continuous T = 25C (Note 5) 50 A D C Continuous T = 100C (Note 5) 32 C Continuous T = 25C (Note 1a) 10.7 A Pulsed (Note 4) 250 E Single Pulse Avalanche Energy (Note 3) 73 mJ AS P Power Dissipation T = 25C 52 W D C Power Dissipation T = 25C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, Junction to Case 2.4 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity NTTFS010N10MCL N10L WDFN8 (3.3x3.3) 7 12 mm 1500 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 100 V DSS D GS Breakdown Voltage I = 250 A, referenced to 25C 64 mV/C D BV DSS Temperature Coefficient T J I Zero Gate Voltage Drain Current V = 80 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 85 A 1.0 1.5 3.0 V GS(th) GS DS D Gate to Source Threshold Voltage I = 85 A, referenced to 25C 5.3 mV/C V D GS(th) Temperature Coefficient T J r Static Drain to Source On V = 10 V, I = 15 A 9.1 10.6 m DS(on) GS D Resistance V = 4.5 V, I = 12 A 13.5 15.9 GS D V = 10 V, I = 15 A, 15.3 17.8 GS D T = 125C J g Forward Transconductance V = 5 V, I = 15 A 54 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 50 V, V = 0 V, 1530 2150 pF ISS DS GS f = 1 MHz C Output Capacitance 625 875 OSS C Reverse Transfer Capacitance 10 18 RSS R Gate Resistance 0.1 1.1 2.1 G www.onsemi.com 2